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首页> 外文会议>Conference on Design for Manufacturability through Design-Process Integration; 20080128-29; San Jose,CA(US) >Process variation in metal-oxide-metal (MOM) capacitors
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Process variation in metal-oxide-metal (MOM) capacitors

机译：金属氧化物金属（MOM）电容器的工艺变化

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摘要

Aerial image simulation of interdigitated sidewall capacitor layouts and extraction of feature changes are used to estimate the parametric performance spread of DC Metal-Oxide-Metal (MOM) mixed signal capacitors as a function of the normalized lithographic resolution kl. Since minimum feature sizes are utilized, the variation of MOM capacitors is attributed to lithography spacing. In this paper, kl of 0.8, 0.56, 0.40, and 0.28 are studied. The DC capacitance shows a worst-case variability of 42%. While line-end-shortening is a small fractional change in finger length and proves to be not a critical factor in variability, spacing width proves to be the main source of the variability in DC capacitance. Different annular illumination settings are explored for mitigating the variability in spacing width. Co-design of the pitch and illumination shows that for each kl, there is an optimal annular illumination radius. The optimal set of sigmas (i.e. sigmain and sigmaout) can control the variability between linewidths and spacing widths to 20%.
机译：叉指式侧壁电容器布局的航拍图像仿真和特征变化的提取被用于估计直流金属氧化物金属（MOM）混合信号电容器的参数性能扩展，该性能是归一化光刻分辨率kl的函数。由于利用了最小的特征尺寸，因此MOM电容器的变化归因于光刻间距。本文研究了0.8、0.56、0.40和0.28的kl。直流电容的最坏情况变化为42％。虽然线端缩短是指长度的很小一部分变化，并且证明不是可变性的关键因素，但间距宽度却被证明是直流电容可变性的主要来源。为了减轻间隔宽度的变化，探索了不同的环形照明设置。螺距和照明的共同设计表明，对于每个kl，都有一个最佳的环形照明半径。最佳的sigma集（即sigmain和sigmaout）可以将线宽和间距宽度之间的差异控制为20％。

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