首页> 外文会议>Conference on Diffractive Optics and Micro-Optics June 18-22, 2000 Quebec City, Canada >Transfer of diffractive optical elements into GaAs by use of inductively coupled plasma etching for integration with vertical-cavity surface-emitting lasers
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Transfer of diffractive optical elements into GaAs by use of inductively coupled plasma etching for integration with vertical-cavity surface-emitting lasers

机译:通过使用电感耦合等离子体蚀刻将衍射光学元件转移到GaAs中,以与垂直腔面发射激光器集成

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摘要

Transfer of diffractive optical structures from resist into GaAs, by use of direct-write electron-beam litography followed by dry etching in an inductively-coupled plasma is demonstrated. Our goal is to monolithically integrate diffractive structures with VCSELs.
机译:通过使用直接写入电子束光刻技术,然后在感应耦合等离子体中进行干法蚀刻,证明了衍射光学结构从抗蚀剂转移到GaAs中。我们的目标是将衍射结构与VCSEL单片集成。

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