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首页> 外文会议>Conference on Emerging Lithographic Technologies Ⅴ Feb 27-Mar 1, 2001, Santa Clara, USA >Filter windows for EUV lithography
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Filter windows for EUV lithography

机译：过滤EUV光刻的窗口

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摘要

Extreme-ultraviolet (EUV) lithography based on reflective optics is expected to require at least one filter window to 1) reduce out-of-band radiation in the ultraviolet, visible and infrared, 2) partially protect the optics from debris from the radiation source and any outgassing from the resist on the wafer, and 3) perhaps to serve as a barrier for EUV absorbing gasses. To maximize wafer throughput, the filter window or windows will need to provide the highest possible transmittance at 13.4 nm. EUV filters must operate in a harsh vacuum environment. They will be irradiated with high energy EUV light and will absorb out-of-band radiation that will cause temperature increases of greater than 100℃. Outgassing from the filters must be minimal, and they must survive handling as well as pressure differentials during pump-down operation, and return-to-atmospheric pressure. Prototype filters were fabricated for Sandia's Engineering Test Stand (ETS) and are being utilized in on-going EUV lithography demonstrations. Their in and out-of-band transmittance has been measured and found to meet Sandia's performance specifications, and they have been exposed to various environments with good results.
机译：预计基于反射光学器件的极紫外（EUV）光刻技术至少需要一个滤光片窗口，以达到1）减少紫外线，可见光和红外线中的带外辐射； 2）部分保护光学器件免受来自辐射源的碎屑的影响以及晶圆上的抗蚀剂产生的任何气体，以及3）可能充当EUV吸收气体的屏障。为了使晶片产量最大化，一个或多个过滤器窗口将需要在13.4 nm处提供最高的透射率。 EUV过滤器必须在恶劣的真空环境中运行。它们将被高能EUV光照射，并吸收带外辐射，这将导致温度升高100℃以上。过滤器的除气必须极少，并且必须能够承受处理以及抽空运行期间的压力差以及返回大气压的压力。原型滤光片是为桑迪亚的工程测试台（ETS）制造的，正在用于正在进行的EUV光刻演示中。经测量，它们的带内和带外透射率符合Sandia的性能规格，并且已将它们暴露于各种环境中，效果良好。

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