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首页> 外文会议>Conference on Emerging Lithographic Technologies Ⅴ Feb 27-Mar 1, 2001, Santa Clara, USA >Models for characterizing the printability of buried EUV defects
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Models for characterizing the printability of buried EUV defects

机译：表征掩埋EUV缺陷可印刷性的模型

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摘要

Models for the printability of buried 3D EUV defect are analyzed and extended using rigorous electromagnetic simulation by TEMEPST. Parallel simulation on a network of workstation was used to examine the classical assumptions of coherent illumination, uniformly filling the entrance pupil and vertical propagation in the theoretical model of Gullikson for Gaussian defects. Results show that the limitation of the model is the lack of uniformity of filling the pupil for defects with diameter (2~*sigma) larger than 0.20λ/NA at the wafer plane. Beyond this diameter the dip in the clear field intensity no longer follows the quadratic decrease with size and height of the model. Rather the dip quickly goes through its worst-case minimum intensity near 70 nm and then rises as the size further lowers the local surface slope. The worst-case image decrease from the clear field value for any sized Gaussian defect is roughly 18% per nm of height. Thus isolated Gaussian defects with height less than 2 nm will never reduce the field intensity to less than 60% of the clear field value.
机译：使用TEMEPST进行的严格电磁仿真，分析并扩展了掩埋3D EUV缺陷的可印刷性模型。在Gullikson高斯缺陷理论模型中，使用工作站网络上的并行仿真检查了相干照明，均匀填充入射光瞳和垂直传播的经典假设。结果表明，该模型的局限性在于在晶片平面上直径（2〜* sigma）大于0.20λ/ NA的缺陷的光瞳填充不均匀。超过此直径，空旷场强度的下降将不再跟随模型尺寸和高度的二次下降。相反，倾角会迅速通过其最坏情况下的最小强度，即接近70 nm，然后随着尺寸的减小而进一步降低局部表面斜率，然后逐渐增大。对于任何大小的高斯缺陷，最坏情况的图像从明场值减少的幅度大约为每纳米高度18％。因此，高度小于2 nm的孤立高斯缺陷将永远不会将场强降低到小于清晰场值的60％。

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