EUV Phase-shifting Masks and Aberration Monitors

机译：EUV相移掩模和像差监视器

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Rigorous electromagnetic simulation with TEMPEST is used to examine the use of phase-shifting masks in EUV lithography. The effects of oblique incident illumination and mask patterning by ion-mixing of multilayers are analyzed. Oblique incident illumination causes streamers at absorber edges and causes position shifting in aerial images. The diffraction waves between ion-mixed and pristine multilayers are observed. The phase-shifting caused by stepped substrates is simulated and images show that it succeeds in creation of phase-shifting effects. The diffraction process at the phase boundary is also analyzed. As an example of EUV phase-shifting masks, a coma pattern and probe based aberration monitor is simulated and aerial images are formed under different levels of coma aberration. The probe signal rises quickly as coma increases as designed.

机译：使用TEMPEST进行严格的电磁仿真可检查EUV光刻中相移掩模的使用。分析了多层离子混合对斜入射照明和掩模构图的影响。倾斜的入射照明会在吸收体边缘形成拖缆，并在航拍图像中引起位置偏移。观察到离子混合的和原始的多层之间的衍射波。模拟了由阶梯状基板引起的相移，图像显示其成功地产生了相移效果。还分析了相界处的衍射过程。作为EUV相移掩模的示例，模拟了基于彗形图样和探头的像差监视器，并在不同水平的彗形像差下形成了航拍图像。探查信号随着昏迷的增加而迅速上升。

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来源
《Conference on Emerging Lithographic Technologies VI Pt.1, Mar 5-7, 2002, Santa Clara, USA》|2002年|p.495-502|共8页
会议地点 Santa Clara CA(US)
作者
Yunfei Deng; Andrew R. Neureuther;
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作者单位

Electronics Research Laboratory and Department of Electrical Engineering and Computer Sciences University of California at Berkeley, Berkeley, CA 94720;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
EUV; phase-shifting; mask patterning; oblique incident; ion-mixing; phase edge; diffraction; aberration;

机译：EUV；相移掩模图案；倾斜事件离子混合相位边衍射;像差;

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1. Simple method to manufacture a self-aligning alternating phase-shifting photo mask for EUV photo lithography using existing photo mask manufacturing capabilities [J] . Research Disclosure . 2019,第658期

机译：使用现有光掩模制造能力制造用于EUV光刻的自对准交替相移光掩模的简单方法
2. Simple method to manufacture a self-aligning alternating phase-shifting photo mask for EUV photo lithography using existing photo mask manufacturing capabilities [J] . Research Disclosure . 2019,第658期

机译：使用现有的照片掩模制造能力制造用于EUV照片光刻的自对准交替相移照片掩模的简单方法
3. Aberration-induced intensity imbalance of alternating phase-shifting mask in lithographic imaging [J] . Bo Peng, Xiangzhao Wang, Zicheng Qiu, Optics Letters . 2010,第9期

机译：光刻成像中像差引起的交替相移掩模的强度不平衡
4. EUV Phase-shifting Masks and Aberration Monitors [C] . Yunfei Deng, Andrew R. Neureuther Society of Photo-Optical Instrumentation Engineers Conference on Emerging Lithographic Technologies . 2002

机译：EUV相移掩模和像差监视器
5. Key Challenges in EUV Mask Technology: Actinic Mask Inspection and Mask 3D Effects. [D] . Wang, Yow-Gwo. 2017

机译：EUV掩模技术的主要挑战：光化掩模检测和掩模3D效果。
6. Binary phase masks for easy system alignment and basic aberration sensing with spatial light modulators in STED microscopy [O] . André Klauss, Florian Conrad, Carsten Hille -1

机译：STED显微镜中使用空间光调制器的二元相位掩模可轻松实现系统对准和基本像差检测
7. Alternating phase-shifting mask design for low aberration sensitivity [O] . Alfred K. Wong 2005

机译：用于低像差灵敏度的交替相移掩模设计

EUV Phase-shifting Masks and Aberration Monitors

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