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首页> 外文会议>Conference on Emerging Lithographic Technologies VIII pt.2; 20040224-20040226; Santa Clara,CA; US >Modeling carbon contamination of extreme ultraviolet (EUV) optics
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Modeling carbon contamination of extreme ultraviolet (EUV) optics

机译：模拟极端紫外线（EUV）光学元件的碳污染

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摘要

A mathematical model is used to describe the processes that contribute to the deposition of a carbon film on EUV multilayer optics when the optic is exposed to EUV radiation in the presence of residual hydrocarbon gases. The key physical and chemical processes taken into account within the model include the transport of residual hydrocarbons to the irradiated area, molecular diffusion across the optic surface, and the subsequent dissociation or "cracking" of the hydrocarbon by both direct EUV ionization and secondary electron excitation. The dissociated hydrocarbons are reactive and form a carbonaceous film that reduces the reflectivity of the optic and the overall throughput of the EUV lithographic system. The model, which provides estimates of hydrocarbon film growth under various conditions of hydrocarbon partial pressures and EUV power, is validated by predicting the carbon thickness associated with a series of EUV exposures performed in the laboratory. The model is then used to evaluate the effects of hydrocarbon partial pressure, EUV power, hydrocarbon mass, and temperature on the growth of the carbonaceous contaminate layer.
机译：数学模型用于描述当光学元件在残留烃类气体的存在下暴露于EUV辐射时，有助于在EUV多层光学元件上沉积碳膜的过程。模型中考虑的关键物理和化学过程包括残余碳氢化合物向辐照区域的传输，分子在光学表面的扩散，以及随后通过直接EUV电离和二次电子激发而使碳氢化合物解离或“裂化” 。解离的烃是反应性的，并形成碳质膜，从而降低光学元件的反射率和EUV光刻系统的总产量。该模型提供了在各种烃分压和EUV功率条件下烃膜生长的估算值，该模型通过预测与实验室中进行的一系列EUV暴露相关的碳厚度来验证。然后使用该模型评估碳氢化合物分压，EUV功率，碳氢化合物质量和温度对碳质污染层生长的影响。

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