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Recent progress of LEEPL mask technology

机译:LEEPL掩模技术的最新进展

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LEEPL mask specifications for LEEPL volume production tool "EBPrinter LEEPL-3000" have been fixed and 1X LEEPL stencil masks for 65 nm node device fabrication have been developed and evaluated. "EBPrinter LEEPL-3000" handles a 6025 type mask which is compatible with a 6025 photo mask and a 200 mm wafer type mask. Both of masks have silicon based membranes with a thickness of 0.5 um - 2.0 um. Exposure field size of "EBPrinter LEEPL-3000" is 46 mm X 46 mm, and pattern area of the LEEPL mask is the same 46 mm X 46mm which covers four fields of an optical stepper and a field of an optical scanner. Obtaining small patterns, high CD accuracy and high image placement (IP) accuracy are very important for a 1X mask. Less than 70 nm patterns with a CD accuracy of 6.9 nm were obtained. As "EBPrinter LEEPL-3000" has a mask global IP error correction function using a sub-deflector, specification of IP error is not so critical. Specification of global IP error is less than 30 nm, and local IP error is less than 10 nm. Those are easily obtained with membrane stress control and a multiple exposure method of electron beam mask exposure systems.
机译:LEEPL量产工具“ EBPrinter LEEPL-3000”的LEEPL掩模规范已得到修复,并且已开发和评估了用于65 nm节点器件制造的1X LEEPL模板掩模。 “ EBPrinter LEEPL-3000”处理6025型掩模,该掩模与6025光掩模和200 mm晶圆型掩模兼容。两种掩模均具有厚度为0.5 um-2.0 um的硅基膜。 “ EBPrinter LEEPL-3000”的曝光场尺寸为46 mm X 46 mm,LEEPL掩模的图案面积为46 mm X 46mm相同,涵盖了光学步进器的四个场和光学扫描仪的场。获得小图案,高CD精度和高图像放置(IP)精度对于1X掩模非常重要。获得小于70 nm的图案,CD精度为6.9 nm。由于“ EBPrinter LEEPL-3000”具有使用次偏转器的掩膜全局IP错误校正功能,因此IP错误的规范不是那么关键。全局IP错误的规格小于30 nm,本地IP错误的规格小于10 nm。通过膜应力控制和电子束掩模曝光系统的多重曝光方法可以轻松获得这些图像。

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