Accurate modeling of noise parameters in sub-quarter micrometr gate FETs using physical simulators

机译：使用物理模拟器对亚四分之一微米栅极FET中的噪声参数进行精确建模

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摘要

The noise performance of sub-quarter micrometer gate length FETs is determined by using physical simulators. The hydrodynamic transport model equations are linearized and efficiently solved in two dimensions to determine the small-signal parameters and the minimum noise figure up to frequencies near the device cut-off frequency. For higher frequencies, the noise performance is obtained by using a two-dimensional Monte-Carlo code which fully takes into account the non-stationary transport properties and quantization effects. The relation between the terminal noise currents and the internally generated noise at the different device regions are determined. Different device structures are simulated and the obtained results are compared with experimental data.

机译：使用物理模拟器确定四分之一微米栅极长度FET的噪声性能。将流体动力传输模型方程式线性化并在二维中有效求解，以确定在接近设备截止频率的频率处的小信号参数和最小噪声系数。对于更高的频率，通过使用二维蒙特卡洛代码获得噪声性能，该代码充分考虑了非平稳传输特性和量化效果。确定在不同器件区域的终端噪声电流与内部产生的噪声之间的关系。模拟了不同的器件结构，并将获得的结果与实验数据进行了比较。

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来源
《Conference on Noise in Devices and Circuits Jun 2-4, 2003 Santa Fe, New Mexico, USA》|2003年|p.451-462|共12页
会议地点 Santa Fe NM(US);Santa Fe NM(US)
作者
Ali Abou-Elnour;
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作者单位

Ajman University of Science and Technology, Faculty of Engineering Electronics and Communication Department, P.O.Box 346 Ajman, UAE;

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会议组织
原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
noise figure; impedance field-method; ultra-small devices; non-stationary transport; quantization effects; monte-carlo code; hydrodynamic transport model nanometer structures; field effect transistors (FETs);

机译：噪声系数;阻抗场法;超小型设备;非平稳传输;量化效应;蒙特卡洛码;流体动力学传输模型纳米结构;场效应晶体管（FET）;

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机译：适用于低噪声RF应用的18nm双栅极无结p型MOSFET的物理DC和热噪声模型
2. Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models [J] . Schlechtweg M., Reinert W. IEEE Transactions on Microwave Theory and Techniques . 1992,第12期

机译：基于精确的S参数和噪声模型的CPW技术中的高性能60 GHz伪变形MODFET LNA的设计和表征
3. Accurate Modeling of Nanoscale Gate Underlap SOI MOSFET and Design of Low Noise Amplifier for RF Applications [J] . I. V. Singh, M. S. Alam, G. A. Armstrong Radioelectronics and Communications Systems . 2013,第6期

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4. Accurate modeling of noise parameters in sub-quarter micrometr gate FETs using physical simulators [C] . Ali Abou-Elnourauthor_name/, SPIE-The International Society for Optical Engineering Conference on noise in devices and circuits . 2003

机译：使用物理模拟器精确建模亚季度微型栅极FET中的噪声参数
5. Measurement and modeling of 1/f noise in MOSFET devices with high-kappa material as the gate dielectric. [D] . Morshed, Tanvir Hasan. 2007

机译：使用高κ材料作为栅极电介质的MOSFET器件中1 / f噪声的测量和建模。
6. Current noise parameters derived from voltage noise and impedance in embryonic heart cell aggregates. [O] . J R Clay, L J DeFelice, R L DeHaan 1979

机译：电流噪声参数源自胚胎心脏细胞聚集体中的电压噪声和阻抗。
7. Thermal channel noise of quarter and sub-quarter micron NMOS FET’s [O] . Gerhard Knoblinger, Peter Klein, Uwe Baumann 2013

机译：四分之一和四分之一微米NMOS FET的热通道噪声

Accurate modeling of noise parameters in sub-quarter micrometr gate FETs using physical simulators

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