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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >CD control in phase-edge lithography - the effects of lens aberration and pattern layout
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CD control in phase-edge lithography - the effects of lens aberration and pattern layout

机译：相边缘光刻中的CD控制-镜头像差和图案布局的影响

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This paper presents a study of the CD accuracy of phase-edge lithography for 130-nm-node CMOS-gate patterning. In phase-edge lithography, although large process margins are obtained, precise OPC(Optical Proximity effect Correction)is necessary because of large proximity effect. Rule-based OPC was applied to phase-edge gate patterns (Lg=100 nm) with KrF exposure in fabricating 130-nm CMOS LSIs. Proximity effects due to pattern variations in the arrangement of the phase shift mask, the effect of double exposure, the micro-loading effect in dry etching and differences between the etching rates for nMOS and pMOS were all corrected. The variations in CD that were due to the proximity effect decreased from +-15 nm to +-5 nm by applying the OPC. Although the error in CD was decreased, process margins for specific pattern arrangements were degraded by lens aberration. Analysis shows that the image performance of an asymmetric pattern is strongly affected by odd-order aberrations and may reduce the process margins for those patterns. The suppression of lens aberration and symmetric phase-shifting mask designs which are less sensitive to aberrations are essential as ways to achieve highly accurate control of CD in applying the phase-edge method.
机译：本文介绍了对130 nm节点CMOS栅极图案进行相位边缘光刻的CD精度的研究。在相边缘光刻中，尽管获得了较大的工艺裕度，但是由于邻近效应较大，因此需要精确的OPC（光学邻近效应校正）。在制造130 nm CMOS LSI时，将基于规则的OPC应用于具有KrF曝光的相边缘栅极图案（Lg = 100 nm）。校正了由于相移掩模的布置中的图案变化而引起的邻近效应，两次曝光的效应，干法蚀刻中的微负载效应以及nMOS和pMOS的蚀刻速率之间的差异。通过应用OPC，归因于邻近效应的CD的变化从+ -15 nm减小至+ -5 nm。尽管减小了CD中的误差，但由于透镜像差而降低了特定图案排列的工艺裕度。分析表明，不对称图案的图像性能会受到奇数阶像差的强烈影响，并且可能会降低这些图案的工艺裕度。抑制像差和对像差不敏感的对称相移掩模设计对于在应用相边缘方法中实现CD的高精度控制是必不可少的。

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