• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >Resist Distribution Effect of Spin Coating
【24h】

Resist Distribution Effect of Spin Coating

机译：旋涂的抗蚀剂分布效应

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The thin film formation of the spin coating is one of the important factors in the fabrication of micro-electronic devices. In this study, the theoretical models for thickness variation during the spin coating are discussed and the nanotopography impact is analyzed. The finite-difference-time-domain method and the finite element method are used to solve the convective diffusion equation for the solvent distribution and the Navier-Stokes equation including solvent evaporation for the film thickness change. These numerical calculations have good agreement to the experimental results of the non-chemically amplified resist (CAR) and the CAR. Solvent distributions of the non-spin coating are described through the mesoscale modeling by using the Monte Carlo method. How the nanotopography impacts on the variation of resist distribution after the spin coating is investigated quantitatively. So, the reason of the similarity in the transfer functions of the different type wafers is the solvent diffusion and evaporation.
机译：旋涂的薄膜形成是微电子器件制造中的重要因素之一。在这项研究中，讨论了旋涂过程中厚度变化的理论模型，并分析了纳米形貌的影响。时域有限差分法和有限元方法用于求解对流扩散方程的溶剂分布和Navier-Stokes方程，包括溶剂蒸发以改变膜厚。这些数值计算与非化学放大抗蚀剂（CAR）和CAR的实验结果具有很好的一致性。非旋转涂层的溶剂分布是使用蒙特卡洛方法通过介观模型描述的。定量研究了旋涂后纳米形貌如何影响抗蚀剂分布的变化。因此，不同类型晶片的传递函数相似的原因是溶剂扩散和蒸发。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号