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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >New Photomask Patterning Method based on KrF Stepper
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New Photomask Patterning Method based on KrF Stepper

机译：基于KrF步进器的新型光掩模构图方法

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摘要

To solve the very low throughput of an e-beam writer in mask fabrication, a new patterning method based on a step-and-repeat exposure system, that is a photomask repeater, has been developed. In this paper, we intended to clarify the feasibility of 0.15μm generation mask fabrication with the KrF photomask repeater. Inter-field registration accuracy(3sigma) in the photomask repeater is 14.9nm in X direction and 29.1 nm in Y direction and can meet the registration specification(30 nm) of a 0.15μm generation mask. Intra-field mis-registration caused by stepper lens distortion is 14 nm(3sigma) in X direction and 12 nm in Y direction for a 12 mm x 12 mm field and gets larger with an increase of a field size. Inter-field CD uniformity(3sigma) is 15.7 nm in 122.5 mm x 122.5 mm mask area and intra-field CD uniformity is 10.3 nm in 12 mm x 12 mm field area. The sum of inter-field and intra-field value in the KrF photomask repeater don't currently satisfy the 30 nm registration and 15 nm CD uniformity specification of a 0.15μm generation mask. So we need to reduce the registration and CD errors with optimizing PR coating and development process, using a small field size and compensating the errors of intra-field factors to a mother mask.
机译：为了解决掩模制造中电子束写入器的极低吞吐量，已经开发了一种基于分步重复曝光系统的新构图方法，即光掩模中继器。在本文中，我们打算阐明使用KrF光掩模中继器制造0.15μm代掩模的可行性。光掩模中继器的场间配准精度（3sigma）在X方向为14.9nm，在Y方向为29.1nm，可以满足0.15μm世代掩模的配准规格（30nm）。对于12 mm x 12 mm的场，由步进透镜畸变引起的场内重合在X方向上为14 nm（3sigma），在Y方向上为12 nm，并且随着场尺寸的增大而增大。在122.5 mm x 122.5 mm的掩模区域中，场间CD均匀性（3sigma）为15.7 nm，在12 mm x 12 mm的视野区域中，场内CD均匀性为10.3 nm。 KrF光掩模中继器中场间和场内值的总和目前不满足0.15μm生成掩模的30 nm配准和15 nm CD均匀性规范。因此，我们需要通过优化PR涂层和显影工艺，使用较小的场尺寸并将场内因素的误差补偿到母掩膜来减少套准和CD误差。

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