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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >Meeting the challenges of 157-nm microstepper technology
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Meeting the challenges of 157-nm microstepper technology

机译：应对157 nm微步进技术的挑战

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摘要

For the aim of fabricating next-generation semiconductor devices, researchers are now attempting to enhance 157-nm lithography so as to achieve 70-nm node level various circuit designs. Many of the challenges for 157-nm technology such as contamination and purge control, calcium fluoride intrinsic birefringence, finding resists with suitable performance characteristics, have been performed. The major challenge, in terms of stability of tool performance, has been the apparent accumulation of contamination on the bottom of the objective. This has been evidenced by a reduction in resolution performance and an increase in the non-uniformity of the illumination intensity across the image plane. Uniformity over the entire imaging field has increased from 0.58% to as much as 18.5% through the use of the tool. This paper reports our demonstration that loss of uniformity due to contamination from resist outgassing can be reversed by cleaning the bottom surface of the lens of 157-nm microstepper (Ultratech Stepper Inc.) in-situ using 157-nm light and a small concentration of O_2 in the N_2 purging for exposure area. With an in-situ oxygen (O_2) and vaccum ultra violet (VUV) cleaning, the uniformity of over the full imaging field has been improved from 18.5% to 6.0%. The edges of the imaging field do not recover as well during a cleaning as the center of the field, as the central 0.5mm diameter of the field uniformity has been improved to more or less 2.0%. The procedure of this in-situ O_2 cleaning will also be introduced, and in addition to this in-situ O_2 cleaning, some recent results in system performance will be shown and many of these challenges will be discussed.
机译：为了制造下一代半导体器件，研究人员现在正在尝试增强157 nm光刻技术，以实现70 nm节点级的各种电路设计。 157-nm技术面临的许多挑战，例如污染和吹扫控制，氟化钙固有双折射，寻找具有合适性能特征的抗蚀剂，都面临着挑战。就工具性能的稳定性而言，主要的挑战是物镜底部明显的污染物堆积。分辨率性能下降和整个图像平面上照明强度的不均匀性增加证明了这一点。通过使用该工具，整个成像领域的均匀度从0.58％提高到18.5％。本文报道了我们的论证，即通过使用157 nm光和少量浓度的157 nm光原位清洗157 nm微步进器（Ultratech Stepper Inc.）的透镜底部表面，可以弥补由于抗蚀剂脱气造成的污染而造成的均匀性损失。 N_2中的O_2清除暴露区域。通过原位氧气（O_2）和真空紫外线（VUV）清洁，整个成像场的均匀性已从18.5％提高到6.0％。在清洁过程中，成像场的边缘不能像场中心那样恢复良好，因为场均匀性的中心0.5mm直径已提高到大约2.0％。也将介绍这种原位O_2清洗的过程，除了这种原位O_2清洗之外，还将显示一些近期系统性能的结果，并将讨论许多这些挑战。

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