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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >Clear Field Dual Alternating Phase Shift Mask Lithography
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Clear Field Dual Alternating Phase Shift Mask Lithography

机译：清晰视野双相移掩模光刻

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摘要

A new double exposure technique using two alternating phase shift masks (APSMs) is developed for patterning clear field designs at ultra small critical dimensions. It is called Clear Field Dual APSM Lithography. It is based on the hypothesis that phase conflicts can be avoided for both masks if apertures oriented along the vertical direction are assigned to one mask, and those along the horizontal direction to the other. It is expressed as a heuristic mask synthesis strategy in which each mask is imaged at the full exposure dose. The strategy was validated using aerial image simulations of various design configurations. Interesting results were obtained regarding image stitching, tight patterns, design rules, image resonance and its mitigation, and the beneficial properties of phase edges.
机译：开发了一种使用两个交替相移掩模（APSM）的新的双曝光技术，用于以超小临界尺寸对清晰的野外设计进行图案化。它称为“ Clear Field Dual APSM光刻”。基于这样的假设，如果将沿垂直方向定向的孔径分配给一个掩模，而将沿水平方向定向的孔径分配给另一个掩模，则可以避免两个掩模都发生相位冲突。它表示为一种启发式掩膜合成策略，其中每个掩膜均以全曝光剂量成像。使用各种设计配置的航拍图像仿真验证了该策略。在图像拼接，紧密图案，设计规则，图像共振及其缓解以及相位边缘的有益特性方面获得了有趣的结果。

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