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SYSTEMS, METHODS, AND APPARATUSES FOR IMPLEMENTING CRITICAL DIMENSION (CD) AND PHASE CALIBRATION OF ALTERNATING PHASE SHIFT MASKS (APSM) AND CHROMELESS PHASE LITHOGRAPHY (CPL) MASKS FOR MODELING
SYSTEMS, METHODS, AND APPARATUSES FOR IMPLEMENTING CRITICAL DIMENSION (CD) AND PHASE CALIBRATION OF ALTERNATING PHASE SHIFT MASKS (APSM) AND CHROMELESS PHASE LITHOGRAPHY (CPL) MASKS FOR MODELING
In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for implementing critical dimension (CD) and phase calibration of alternating phase shift masks (APSM) and chromeless phase lithography (CPL) masks for modeling. For instance, in accordance with one embodiment, there are means described for identifying critical dimensions of structures of a mask via means for illuminating the mask via a light source; collecting multiple measurements of the critical dimensions of the structures of the mask by iteratively: (i) capturing a diffraction pattern from diffraction of the illumination traversing through the mask for each of multiple structures of the mask at different focus offsets, and (ii) measuring a difference in width between neighboring spaces in the diffraction patterns for each of the multiple structures of the mask at the different focus offsets; curve fitting the collected multiple measurements against target physical critical dimensions for each of the multiple structures to determine a critical dimension delta between the target physical measurements and the collected multiple measurements; and analyzing the critical dimension delta to extract constructive lateral dimensions and effective trench depths for each of the multiple structures of the mask. Other related embodiments are disclosed.
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