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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >Mask Design Optimization for 70nm Technology Node Using Chromeless Phase Lithography (CPL) Based on 100 Transmission Phase Shifting Mask
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Mask Design Optimization for 70nm Technology Node Using Chromeless Phase Lithography (CPL) Based on 100 Transmission Phase Shifting Mask

机译：基于100％透射相移掩模的无铬相光刻（CPL）用于70nm技术节点的掩模设计优化

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摘要

Chromeless phase lithography (CPL, or previously named CLM) is based on using 100% transmission PSM in the critical patterning area. However, unlike the conventional single Chromeless phase edge type, CPL forms pattern images based on a pair of symmetrical phase-edges in proximity. In principle, the mask pattern layout is very similar to attenuated phase shift mask. There is no need to be concerned with neither phase assignment nor phase conflict. The mask layout complexity is greatly reduced as compared to the requirement for alternating PSM. In this report, we discuss how to optimize CPL mask design for a full-chip application. One effective method is by applying chrome patches or "chrome shields" (0% transmission and non phase-shifted) on top of the optically sensitive pattern areas. In "large" 100% phase transmission areas, the chrome shield can prevent printing an undesirable pattern. As for the "critical" pattern areas, chrome shields can be effectively used for controlling optical proximity effects in order to enhance the printing performance. We found chrome scattering bar (SB) OPC is necessary to improve process window. Using LithoCruiser~(TM) simulation, we predict that it is possible to obtain manufacturable overlapped-process-window across a full range of feature pitch for 70nm line CD target with ArF exposure.
机译：无铬相光刻（CPL，或以前称为CLM）基于在关键图案区域中使用100％透射PSM。但是，与常规的单个无铬相边缘类型不同，CPL基于一对相邻的对称相边缘形成图案图像。原则上，掩模图案布局与衰减相移掩模非常相似。无需关心相位分配或相位冲突。与交替PSM的要求相比，大大降低了掩模布局的复杂性。在本报告中，我们讨论了如何针对全芯片应用优化CPL掩模设计。一种有效的方法是在光学敏感图案​​区域的顶部应用镀铬补丁或“镀铬屏蔽”（0％透射率和无相移）。在“大”的100％相透射区域中，镀铬罩可防止印刷不良图案。对于“关键”图案区域，铬罩可有效地用于控制光学邻近效应，以增强印刷性能。我们发现铬散射棒（SB）OPC对于改善工艺窗口是必要的。使用LithoCruiserTM模拟，我们预测有可能在ArF曝光的整个70nm线CD靶材的整个特征间距范围内获得可制造的重叠工艺窗口。

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