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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >Effects of Residual Aberrations on Line-end Shortening in 193 nm Lithography
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Effects of Residual Aberrations on Line-end Shortening in 193 nm Lithography

机译：残余像差对193 nm平版印刷术中线端缩短的影响

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摘要

This paper extends and further validates the methodology for calibrating 193nm chemically amplified resist models and applying the models to line-end shortening simulation in the presence of image imperfections. SPLAT, an imaging simulator, is used to simulate the light intensity at the bottom of resist film and predict the resulted wafer patterns in the presence of lens aberrations. The mask critical dimensions (CD) were measured to exclude the mask CD error effects. The experiments were conducted at Texas Instruments on a 193nm scanner. The mask CD errors proved a major contribution to isolated-dense line CD bias on the wafer. The lens aberrations were shown to be critical to the choice of optimal imaging location and the through-focus CD variation. By finding the optimal image location and threshold photoacid concentration, this model can predict line CD through focus, pitch and feature size, with a RMS error of 5nm. However, this model is not adequate in predicting the narrow space between line ends due to the poor resist response in very low contrast areas. A variable threshold model based on trajectory dissolution rate assumption is proposed to predict the wafer CD in low contrast areas, which resulted in a RMS error of 24nm. Considering the large SEM measurement noise on 193nm resists, this error is reasonable and sufficient for OPC applications.
机译：本文扩展并进一步验证了校准193nm化学放大抗蚀剂模型并将其应用于存在图像缺陷的线端缩短仿真中的方法。 SPLAT是一种成像模拟器，用于模拟抗蚀剂膜底部的光强度，并在存在透镜像差的情况下预测所得的晶片图案。测量掩模的临界尺寸（CD）以排除掩模的CD误差影响。实验是在Texas Instruments的193nm扫描仪上进行的。事实证明，掩模CD的错误是造成晶片上的密集线CD偏置的主要因素。镜头像差对于选择最佳成像位置和贯穿焦点的CD变化至关重要。通过找到最佳图像位置和阈值光酸浓度，该模型可以通过聚焦，间距和特征尺寸来预测线CD，RMS误差为5nm。但是，由于在非常低的对比度区域中抗蚀剂响应较差，因此该模型不足以预测线端之间的狭窄空间。提出了一种基于轨迹溶出速率假设的可变阈值模型，以预测低对比度区域中的晶圆CD，从而导致RMS误差为24nm。考虑到193nm抗蚀剂上的SEM测量噪声很大，此误差对于OPC应用而言是合理且足够的。

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