• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Optical Microlithography XVII pt.2; 20040224-20040227; Santa Clara,CA; US >Through Pitch Intensity Balancing and Phase Error Analysis of 193nm Alternating Phase Shift Masks
【24h】

Through Pitch Intensity Balancing and Phase Error Analysis of 193nm Alternating Phase Shift Masks

机译：193nm交替相移掩模的通过间距强度平衡和相位误差分析

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

An investigation of the predominant industry approaches to transmission balance and phase error through pitch of Alternating Aperture Phase-Shifting Mask manufacturing approaches has been conducted. Previous theoretical studies have shown both clear pattern bias and phase error changes through pitch. These variations are significant for the Low K1 applications. Several approaches have been proposed and discussed in previous papers, including undercut, asymmetric pattern biasing, mask phase-only, dual trench, SCAA, and others. Although much of the discussion has focused on lithographic process performance, some of the constraints hi the mask making infrastructure may differentiate between processes of similar performance. Two manufacturable approaches, wet etch undercut and asymmetric pattern biasing, have been studied by electromagnetic field simulation to explore the across pitch performance at 193nm. This has been compared to experimental measurement of photomasks measured with a 193 Zeiss AIMS (Aerial Image Microscope System). Both mask fabrication approaches are compared to the simulations. The performance of both mask approaches to pattern bias and phase error was evaluated, and the feasibility of through pitch correction and its impact on design and manufacturability of the photomask is discussed.
机译：通过交替孔径相移掩模制造方法的间距，已经研究了主要的工业方法来实现传输平衡和相位误差。先前的理论研究表明，清晰的图案偏置和相位误差随螺距的变化。这些变化对于低K1应用很重要。先前的论文中已经提出并讨论了几种方法，包括底切，不对称图案偏置，仅掩模相位，双沟槽，SCAA等。尽管许多讨论都集中在光刻工艺性能上，但掩膜制造基础设施中的某些约束条件可能会区分性能相似的工艺。通过电磁场仿真研究了两种可制造的方法，湿法蚀刻底切和不对称图案偏置，以探索193nm的跨节距性能。这已与用193 Zeiss AIMS（航空图像显微镜系统）测量的光掩模的实验测量进行了比较。将两种掩模制造方法与仿真进行比较。评估了两种掩膜方法在图案偏置和相位误差方面的性能，并讨论了通过间距校正的可行性及其对光掩膜设计和可制造性的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号