Infrared reflectance characterization of GaSb epilayers on (001) GaAs substrates

机译：（001）GaAs衬底上GaSb外延层的红外反射特性

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GaSb epilayers grown by organometallic vapour phase epitaxy (MOVPE) onto 2° off (100) GaAs substrates were characterized by infrared reflectance spectroscopy, using a new, modified oscillator formula. Dielectric parameters obtained for both layer and substrate respectively are presented in the range 200-1000 cm~(-1).

机译：通过有机金属气相外延（MOVPE）在2°off（100）GaAs衬底上生长的GaSb外延层通过红外反射光谱法进行了表征，使用了一种新的改进的振荡器公式。分别针对层和衬底获得的介电参数在200-1000cm-1（-1）的范围内。

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《Conference on Photo-Responsive Materials; 20040225-29; Kariega Game Reserve(ZA)》|2004年|P.c2349-c2353|共5页
会议地点 Kariega Game Reserve(ZA)
作者
J. A. A. Engelbrecht; J. R. Botha;
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作者单位

Department of Physics, University of Port Elizabeth, P.O. Box 1600, Port Elizabeth 6001, South Africa;

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原文格式 PDF
正文语种 eng
中图分类材料;
关键词
theory, models, and numerical simulation; semiconductors; Ⅲ-Ⅴ semiconductors;

机译：理论，模型和数值模拟；半导体；Ⅲ-Ⅴ族半导体;

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机译：（001）GaAs衬底上GaSb外延层的红外反射特性
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4. Infrared reflectance characterization of GaSb epilayers on (001) GaAs substrates [C] . J. A. A. Engelbrecht, J. R. Botha Conference on Photo-Responsive Materials . 2004

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Infrared reflectance characterization of GaSb epilayers on (001) GaAs substrates

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