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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >New Concept of Specification for Mask Flatness
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New Concept of Specification for Mask Flatness

机译：掩模平面度规范的新概念

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摘要

The shrinkage of semiconductor devices creates demand for micronization in the photolithographic process. As a result, problems are arising in photolithography in the semiconductor manufacturing process. Focus latitude in photolithography becomes smaller as micronization advances and therefore the flatness of the mask can no longer be ignored. In this work, we clarified what the specification of mask flatness should be from the standpoint of its warpage in vacuum chucking of an exposure tool. A two-dimensional approach was applied for the prediction of mask surface after chucking. The approach is simple analytical calculation distinguishing between x-direction and y-direction. Warpage of mask surface after chucking has two modes depending on the directions. One is leverage caused by interaction of mask surface and chucking stage. Another one is warpage along chucking stage surface. The prediction shows good agreement with the actual surface of chucked mask. From this study, a new concept of the specification for mask blank flatness was proposed, taking warpage in vacuum chuck into consideration in the prediction. The proposed specification certainly can exclude masks that show large deformation after chucking even though with good free-standing flatness.
机译：半导体器件的收缩在光刻工艺中产生了对微粉化的需求。结果，在半导体制造过程中的光刻中出现问题。随着微粉化的发展，光刻中的聚焦纬度变得更小，因此不再不能忽略掩模的平坦度。在这项工作中，我们从曝光工具真空吸盘翘曲的角度出发，弄清了掩模平整度的规格。二维方法被应用于卡盘后掩膜表面的预测。该方法是区分x方向和y方向的简单分析计算。吸附后的面罩表面翘曲有两种模式，具体取决于方向。一种是由于掩模表面和卡盘阶段的相互作用引起的杠杆作用。另一个是沿卡盘台表面的翘曲。该预测表明与被卡住的口罩的实际表面具有良好的一致性。通过这项研究，提出了掩模毛坯平整度规范的新概念，并在预测中考虑了真空吸盘的翘曲。所提出的规范当然可以排除在卡盘后显示较大变形的面罩，即使具有良好的自支撑平整度。

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