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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >A Method for Generating Complementary Mask Data for an EPL Stencil Mask Using a Commercial Pattern Operation Tool
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A Method for Generating Complementary Mask Data for an EPL Stencil Mask Using a Commercial Pattern Operation Tool

机译：一种使用商业图案操作工具为EPL模板掩模生成互补掩模数据的方法

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Electron-beam projection lithography (EPL) using stencil mask is one of the most promising candidates for next-generation lithography. However, the practical use of a stencil mask for fabricating ULSIs needs proximity effect correction (PEC) as well as complementary data to be prepared in order to solve the "doughnut pattern problem". We have developed a method for generating complementary data by using a pattern operation tool for design-rule checking and phase-shift-mask generation. The advantages of using these commercial DA tools are high processing speed as a result of maintenance of a hierarchical data structure, high reliability, and flexibility to allow the generation rules to be changed. Since beam blur, which varies according to pattern density in a sub-field, has to be estimated in PEC, sub-field division has to be performed prior to PEC. In the developed method, sub-field division is performed after the complementary-data generation. Sub-field division makes the chip data almost flatten and enlarge the output data volume. If the sub-field division is performed prior to complementary decomposition, complementary-data generation cannot take advantage of high-speed processing resulting from the maintenance of a hierarchical data structure. We applied this method for metal layer data of a 14 x 14-mm test chip that includes 300 million figures in flat form. For the complementary-data generation by the developed method CPU time was about 20 minutes using a 500-MHzPC with a 256-Mbyte memory. Maintenance of the hierarchical data structure made the volume of output GDSⅡdata compact. The method can equalize the aperture densities of two complementary masks in a Coulomb-interaction range that is smaller than a sub-field. Although sub-field division using a DRC tool expands the output data volume in GDSⅡformat, sub-field division using EB pattern data generator reduces output data in realistic size.
机译：使用模版掩模的电子束投影光刻（EPL）是下一代光刻的最有希望的候选人之一。但是，为制造ULSI而实际使用模版掩模需要邻近效应校正（PEC）以及要准备的补充数据，以解决“甜甜圈图案问题”。我们已经开发出一种使用模式操作工具生成互补数据的方法，用于设计规则检查和相移掩模生成。使用这些商用DA工具的优点是，由于维护了分层数据结构，因此具有较高的处理速度，较高的可靠性以及可更改生成规则的灵活性。由于必须在PEC中估计根据子场中的图案密度而变化的光束模糊，因此必须在PEC之前执行子场划分。在所开发的方法中，在补充数据生成之后执行子场划分。子场划分使芯片数据几乎变平并扩大了输出数据量。如果在互补分解之前执行子字段划分，则互补数据生成无法利用由于维护分层数据结构而产生的高速处理。我们将此方法用于14 x 14毫米测试芯片的金属层数据，其中包括3亿个平面图。对于通过开发的方法生成的补充数据，使用具有256 MB内存的500 MHz PC的CPU时间约为20分钟。分层数据结构的维护使输出GDSⅡ数据的体积变得紧凑。该方法可以在小于子场的库仑相互作用范围内使两个互补掩模的孔径密度相等。尽管使用DRC工具进行的子场划分以GDSⅡ格式扩展了输出数据量，但是使用EB模式数据生成器的子场划分却减小了实际尺寸的输出数据。

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