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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >Etching Selectivity and Surface Profile of Attenuated Phase Shifting Mask Using CF_4/O_2/He Inductively Coupled Plasma (ICP)
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Etching Selectivity and Surface Profile of Attenuated Phase Shifting Mask Using CF_4/O_2/He Inductively Coupled Plasma (ICP)

机译：使用CF_4 / O_2 / He电感耦合等离子体（ICP）的衰减型移相掩模的蚀刻选择性和表面轮廓

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Selectivity and etched profile of MoSiON in high-density CF_4 / O_2 / He inductively coupled plasma (ICP) have been studied. The etched profiles of MoSiON along with the quartz surface morphologies were investigated as a function of etching parameters by scanning electron microscopy (SEM). We varied pressure from 5 mtorr to 20 mtorr and CF_4 flow rate from 15 sccm to 40 sccm. Smooth quartz surface and vertical MoSiON slope was observed under 10 sccm CF_4, /15 sccm O_2 / -240 V DC bias / 5 mtorr. And the other conditions showed a rough quartz surface and bad MoSiON slope. With these results, we found out that the most dominant factor for the MoSiON profile and quartz morphology was the ratio of CF_4 / O_2 flow rate rather than the pressure. So, we varied the ratio from 0.3 to 3 and investigated changes in the quartz morphology and the MoSiON slope. When the ratio was too low, there were MoSiON remains on the quartz surface and if the ratio was too high, the quartz surface was attacked seriously. Only at the appropriate ratio of CF_4 / O_2 flow rate, smooth quartz surface could be seen. But at the ratio range of CF_4 / O_2 flow rate between 0.3 and 3, no significant change appeared in the MoSiON profile.
机译：研究了高密度CF_4 / O_2 / He感应耦合等离子体（ICP）中MoSiON的选择性和刻蚀轮廓。通过扫描电子显微镜（SEM）研究了MoSiON的蚀刻轮廓以及石英表面形态随蚀刻参数的变化。我们将压力从5 mtorr更改为20 mtorr，将CF_4流速从15 sccm更改为40 sccm。在10 sccm CF_4，/ 15 sccm O_2 / -240 V直流偏压/ 5 mtorr下观察到光滑的石英表面和垂直的MoSiON斜率。其他条件显示石英表面粗糙且MoSiON斜率差。通过这些结果，我们发现，影响MoSiON轮廓和石英形态的最主要因素是CF_4 / O_2流量比而不是压力。因此，我们将比例从0.3更改为3，并研究了石英形态和MoSiON斜率的变化。当该比例太低时，在石英表面上残留有MoSiON，如果该比例太高，则石英表面受到严重侵蚀。只有在CF_4 / O_2流量的适当比例下，才能看到光滑的石英表面。但是在CF_4 / O_2流量的比率范围在0.3和3之间时，MoSiON轮廓没有明显变化。

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