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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >Fogging and pattern loading effect by writing strategy
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Fogging and pattern loading effect by writing strategy

机译：书写策略的雾化和图案加载效果

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摘要

As the CD specification on Masks is getting more tighten, the fogging effect by re-scattered incident electron at a high acceleration e-beam system and the loading effect at dry etching step due to pattern density are current critical issues for mask making. These give rise to the variation of mean CD value and the degradation of global CD uniformity. So we have to correct these effects accurately in order to meet the CD specification for design rule 0.15um or below devices. In this paper, we have applied a new positive CA (chemically amplified) resist from Fuji Film Arch co., It was written at 50 kV variable vector scan E-beam system and we tried to classify the CD error by the fogging and loading effect, respectively. Also we have compared with ZEP7000 resist, non-CAR positive type, which is used widely for conventional e-beam mask making to assess the CAR performance, especially in terms of CD error causing by the fogging effect. Through this comparison test, we found that the CD error due to the fogging effect shows somewhat different value according to resist type and writing strategy even though use same exposure dose. In this paper, we have assumed that such results are due to the difference of dose latitude. Dose latitude is different as intrinsic contrast (γ) value of each resist and writing strategy such as writing pass, should affect on beam profile (dose profile), it can also change pattern profile of resist and it can finally cause a dose latitude difference. Finally, we have evaluated for CD mean error and uniformity error by fogging and etch loading as open ratio (40%, 60%, 80%) changing, respectively.
机译：随着掩模上CD规范的日益严格，在高加速度电子束系统中入射电子被重新散射所产生的雾化效果以及图案密度导致的干法刻蚀步骤中的负载效应是掩模制造的当前关键问题。这些导致平均CD值的变化和整体CD均匀性的下降。因此，我们必须准确地纠正这些影响，才能满足设计规则0.15um或以下器件的CD规范。在本文中，我们使用了来自Fuji Film Arch公司的新型正性CA（化学放大）抗蚀剂，该抗蚀剂是在50 kV可变矢量扫描电子束系统上编写的，并试图通过雾化和加载效应对CD误差进行分类。 ， 分别。此外，我们还与非CAR正型ZEP7000抗蚀剂进行了比较，后者广泛用于常规电子束掩模制造，以评估CAR性能，尤其是在起雾效应引起的CD误差方面。通过该比较测试，我们发现，即使使用相同的曝光剂量，由于起雾效应引起的CD误差根据抗蚀剂类型和写入策略也会显示出一些不同的值。在本文中，我们假设这些结果是由于剂量纬度的不同而引起的。剂量纬度是不同的，因为每个抗蚀剂的固有对比度（γ）值和写入策略（例如写入通过）应影响光束轮廓（剂量轮廓），它​​也会改变抗蚀剂的图案轮廓，最终会导致剂量纬度差异。最后，我们通过改变开孔率（40％，60％，80％）的起雾和蚀刻负荷，评估了CD的平均误差和均匀度误差。

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