EPL mask fabrication

机译：EPL掩模制作

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摘要

The next generation lithography, either electron or photon based, will be first introduced on critical levels for device manufacture. These levels have different requirements for difficulty of meeting image size uniformity, image placement, and patterning requirements on masks. Membrane masks are needed for electron projection lithography (EPL), and the fabrication of membrane masks generates new requirements such as the need for complementary mask pairs for stencil masks. In this paper, we discuss experiments for fabricating EPL masks for device levels.

机译：下一代光刻技术，无论是基于电子还是基于光子的技术，都将首先在关键水平上引入器件制造。这些级别对满足图像尺寸均匀性，图像放置和在掩模上构图要求的难度有不同的要求。电子投影光刻（EPL）需要膜掩模，并且膜掩模的制造产生了新的要求，例如需要用于模版掩模的互补掩模对。在本文中，我们讨论了为设备级制造EPL掩模的实验。

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来源
《Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan》|2002年|p.790-798|共9页
会议地点 Yokohama(JP)
作者
Michael Lercel; Carey Williams; Mark Lawliss; Robin Ackel; Louis Kindt; Emily Fisch;
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作者单位

IBM Microelectronics Essex Junction Vermont 05452;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
electron beam projection lithography; next generation lithography; mask; stencil;

机译：电子束投影光刻；下一代光刻；面具;模版;

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专利

1. Modeling mask fabrication and pattern transfer distortions for EPL stencil masks [J] . P.Reu, R.Engelstad, E.Lovell Microelectronic Engineering . 2001,第期

机译：为EPL模板掩模建模掩模制造和图案转移变形
2. Mask charging phenomena during electron beam exposure in the EPL system [J] . Kotera M, Ishida Y Microscopy and microanalysis: The official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada . 2004,第6期

机译：EPL系统中电子束曝光期间的掩膜充电现象
3. Equivalent modeling techniques for predicting pattern transfer in EPL masks [J] . E.P.Cotte, E.G.Lovell, R.L.Engelstad Microelectronic Engineering . 2001,第期

机译：用于预测EPL掩模中图案转移的等效建模技术
4. 200-mm EPL stencil mask fabrication and metrology at DNP — IP CD accuracy within subfield — [C] . Tadahiko Takikawa, Mikio Ishikawa, Satoshi Yusa, Conference on Emerging Lithographic Technologies VIII pt.2; 20040224-20040226; Santa Clara,CA; US . 2004

机译：DNP的200毫米EPL模板掩模制造和计量-子场内的IP和CD精度-
5. SYSTEMATIC STUDIES OF SALVIA L. SUBGENUS CALOSPHACE (BENTH.) BENTH. IN BENTH. & HOOK. SECTION FARINACEAE (EPLING) EPLING (LAMIACEAE). [D] . PETERSON, KATHLEEN MARGARET. 1978

机译：SALVIA L. Subgenus CALOSPHACE（Benth。）Beth的系统研究。在本底。＆HOOK。节FARINACEAE（EPLING）EPLING（LAMIACEAE）。
6. Phytochemistry of Three Ecuadorian Lamiaceae: Lepechinia heteromorpha (Briq.) Epling Lepechinia radula (Benth.) Epling and Lepechinia paniculata (Kunth) Epling [O] . Gianluca Gilardoni, Jorge Ramírez, Mayra Montalván, 2019

机译：三种厄瓜多尔唇形科的植物化学：异型白花蛇舌草（Bleq。Epping）小叶白花蛇舌草Leadchinia radula（Benth。）Epling和Lepechinia paniculata（Kunth）
7. Study on Nonlaminate Micro Stereolithography using LCD Mask (2nd report)-Thin Layer Laminating Fabrication using LCD Live-motion Mask- [O] . Hideaki NISHINO, Takashi MIYOSHI, Yasuhiro TAKAYA, 2003

机译：使用LCD掩模（第2型报告）的非粘蛋白微立体刻录物 - 使用LCD Live-Motion Match-本层层压制造 -

EPL mask fabrication

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