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EPL Technology Development

机译:EPL技术开发

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摘要

The imaging concept of electron projection lithography (EPL) with a silicon stencil reticle is explained. A silicon membrane thickness of 1-2μm is suitable for the reticle. A scattering contrast of grater than 99% is expected. Nikon is developing EPL tool as EB stepper. Sub-field size is 0.25mm square and deflection length is 5mm on wafer. The wafer is exposed with a sub-field by sub-field basis by the deflection control of the electron beam. The basic system configuration of EB stepper is introduced. Examples of error budgets of CD variation and Overlay/Stitching accuracy for 65nm technology node are shown. The latest data of electron optics and vacuum compatible stages for EB Stepper are introduced. 70nm patterns are resolved in the entire sub-field. The status of infrastructure of technology related to EPL reticle and data post processing software are explained.
机译:解释了具有硅模版掩模版的电子投影光刻(EPL)的成像概念。掩模版的硅膜厚度为1-2μm。预期散射对比度会超过99%。尼康正在开发EPL工具作为EB步进器。子场尺寸为0.25mm见方,偏转长度为5mm。通过电子束的偏转控制,晶片以子场为单位被子场曝光。介绍了EB步进器的基本系统配置。显示了65纳米技术节点的CD变化和覆盖/拼接精度误差预算示例。介绍了EB步进器的电子光学和真空兼容平台的最新数据。 70nm图案可在整个子场中解析。解释了与EPL标线和数据后处理软件相关的技术基础设施的现状。

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