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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >Characteristics of Negative-tone Chemically Amplified Resist (MES-EN1G) for 50keV EB Mask Writing System
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Characteristics of Negative-tone Chemically Amplified Resist (MES-EN1G) for 50keV EB Mask Writing System

机译：50keV EB掩模写入系统的负性化学放大抗蚀剂（MES-EN1G）的特性

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摘要

This report shows characteristics of a new negative-tone CAR (MES-EN1G), that we have developed, for 50 keV electron beam (EB) mask writing system. The CAR is adopted new cross linker that is concentrated more at the bottom of the resist film. The new cross linker raises cross-linking reaction rate at the bottom of resist film. Therefore, undercut profile on chromium film is not observed and vertical resist profile is obtained. Resist profiles of 150, 175, 200, 300 and 400 nm dense line (L&S) patterns of MES-EN1G are printed. The CAR can resolve 150 nm L&S pattern, and so the CAR has the ability to form assist bar feature. Vertical chromium profile is obtained and residual resist thickness is 260 nm after reactive ion etching. The CAR has enough etching durability. Regarding post exposure delay stability in vacuum (PED(Vac.)), CD change is 0.3 nm even if exposed mask is left in vacuum for 10 hours. We suppose that writing time is shorter than 10 hours. Therefore, PED(Vac.) effect of the CAR hardly worsens CD uniformity at all. Dependence on PEB temperature is 3.0nm / ℃. Regarding post coating delay (PCD) effect, the maximum CD error is within +- 5.0 nm even though masks coated with the CAR are left in a conventional blanks case for 39 days. Dependence on fogging effect is 4.1 nm / %. Opaque line CD uniformity (3σ) of 600 nm L&S pattern in local area with MES-EN1G and with positive-tone CAR is 4.6 nm and 11.9 nm, respectively. Therefore, MES-EN1G, which is negative-tone CAR, is advantageous in terms of opaque line CD control. As mentioned above, MES-EN1G is suitable for photomasks manufacturing.
机译：该报告显示了我们为50 keV电子束（EB）掩模写入系统开发的新型负性CAR（MES-EN1G）的特性。 CAR采用了新的交联剂，该交联剂更多地集中在抗蚀剂膜的底部。新的交联剂提高了抗蚀剂膜底部的交联反应速率。因此，没有观察到铬膜上的底切轮廓，并且获得了垂直抗蚀剂轮廓。印刷了MES-EN1G的150、175、200、300和400 nm密集线（L＆S）图案的抗蚀剂轮廓。 CAR可以分辨150 nm的L＆S模式，因此CAR具有形成辅助杆功能的能力。反应离子蚀刻后，获得了垂直的铬轮廓，残留的抗蚀剂厚度为260 nm。该汽车具有足够的蚀刻耐久性。关于真空中的曝光后延迟稳定性（PED（Vac。）），即使将曝光的掩模在真空中放置10小时，CD的变化也为0.3 nm。我们假设写时间少于10小时。因此，CAR的PED（Vac。）效果几乎不会使CD均匀性恶化。对PEB的依赖温度为3.0nm /℃。关于涂布后延迟（PCD）效果，即使在传统的空白盒中将涂有CAR的面罩放置39天，最大CD误差也在±5.0 nm以内。对雾化效果的依赖性为4.1 nm /％。使用MES-EN1G和使用正性CAR时，局部区域600 nm L＆S模式的不透明线CD均匀性（3σ）分别为4.6 nm和11.9 nm。因此，在不透明线CD控制方面，作为负性CAR的MES-EN1G是有利的。如上所述，MES-EN1G适用于光掩模的制造。

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