CAR dry etching technology to produce 0.13 um reticle

机译：CAR干法刻蚀技术可生产0.13 um标线

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Process optimizations have been done to carried out on "0.13um " reticle manufacturing with feature sizes of under 520nm. Micro-loading<10nm and CD uniformity (3S)<10nm process for binary Cr reticle can be achieved with dry etching process using chemical amplify resist (CAR) blanks. HL-950 writer with resist films of 400nm and dry etching with Centura system were adopted for the purpose. It has shown that by optimizing selectivity window in Centura system without assistant gas addition, one could improve the process capability significantly. Design of experiment was applied to investigating the effects of source power, bias power and total pressure on CD uniformity, Micro-loading, Linearity and Process bias. With the DOE results, the process conditions could be fine-tuned to an optimal set of variables, which allow us to manufacture 0.13um masks.

机译：已经对特征尺寸在520nm以下的“ 0.13um”掩模版制造进行了工艺优化。二元Cr掩模版的微加载<10nm和CD均匀性（3S）<10nm工艺可以通过使用化学放大抗蚀剂（CAR）坯料的干法蚀刻工艺实现。为此目的，采用了具有400nm抗蚀剂膜和采用Centura系统的干法蚀刻的HL-950写入器。结果表明，通过在不添加辅助气体的情况下优化Centura系统中的选择性窗口，可以显着提高工艺能力。实验设计用于研究源功率，偏置功率和总压力对CD均匀性，微负载，线性和工艺偏置的影响。利用DOE结果，可以将工艺条件微调至最佳变量集，这使我们能够制造0.13um的掩模。

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来源
《Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan》|2002年|p.323-331|共9页
会议地点 Yokohama(JP)
作者
Wei-Zen Chou; Fei-Gwo Tsai; C.C.Tuo; C.S.Yoo; T.S. Tsai; Lawrence Shue;
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作者单位

Taiwan Semiconductor Manufacturing Company, Ltd. 1, Nan-Ke North Rd., Science-Based Industrial Park, Shan-Hua, Tainan, Taiwan, R.O.C. Applied Materials, Sunnyvale, CA 94086, USA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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CAR dry etching technology to produce 0.13 um reticle

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