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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >Optimization of Alt-PSM structure for 100nm-node ArF lithography (part-2)
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Optimization of Alt-PSM structure for 100nm-node ArF lithography (part-2)

机译：用于100nm节点ArF光刻的Alt-PSM结构的优化（第二部​​分）

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摘要

Alternating phase-shifting mask (Alt-PSM) has been often viewed as one of the most practical techniques for 100nm-and-below node lithography. Among the various mask structures of the Alt-PSMs, the "Single Trench with Undercut Structure", which has a phase shifting trench with side-etching, has been in frequent use for 130nm-node KrF lithography. It is because this structure has good optical characteristics, and it has some advantages in productivity compared with other mask structures. However, when the "single trench with undercut" type Alt-PSM is applied to the 100nm-and-below node ArF lithography, the narrow chrome line width restricts the undercut width and limits the lithographic performance. Therefore a new structure is required. In this work, we discuss optical characteristics of various Alt-PSM structures by using 3 dimensional optical simulation software. First, for basic investigation, we optimize the parameters of mask structure for 100nm line / 100nm space pattern. And then we evaluated these structures in terms of applicability for 100nm-node ArF lithography. And we also verify the simulation results by comparing them with AIMS results of Alt-PSM fabricated with proposed structure.
机译：交替相移掩模（Alt-PSM）通常被视为100纳米及以下节点光刻的最实用技术之一。在Alt-PSM的各种掩膜结构中，具有侧蚀的相移沟槽的“带底切结构的单沟槽”已被频繁用于130nm节点的KrF光刻。这是因为该结构具有良好的光学特性，并且与其他掩模结构相比在生产率方面具有一些优势。但是，将“带底切的单沟槽”型Alt-PSM应用于100nm及以下节点ArF光刻时，较窄的铬线宽度会限制底切宽度并限制光刻性能。因此，需要新的结构。在这项工作中，我们通过使用3D光学仿真软件来讨论各种Alt-PSM结构的光学特性。首先，为了进行基础研究，我们针对100nm线/ 100nm空间图案优化了掩模结构的参数。然后，我们根据100nm节点ArF光刻的适用性评估了这些结构。并且，我们还将仿真结果与拟议结构制造的Alt-PSM的AIMS结果进行比较，从而验证了仿真结果。

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