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首页> 外文会议>Conference on Photon Processing in Microelectronics and Photonics Jan 21-24, 2002 San Jose, USA >Background gas effects on structural properties in thin films deposited by pulsed laser deposition
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Background gas effects on structural properties in thin films deposited by pulsed laser deposition

机译：背景气体对脉冲激光沉积法沉积薄膜的结构性能的影响

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摘要

Pulsed laser deposition (PLD) in background gases is a promising method of preparing multicomponent functional thin films, because interactions between the ablated species and the background gases promote not only physical collisions but also chemical reactions, and affect the characteristics of the deposited films. The properties of indium oxide (In_2O_3) thin films prepared by PLD in background gases were characterized in relation to the background gas pressures. Transparent crystalline In_2O_3 thin films could be obtained at background gas pressures above 1.0 Torr on unheated glass substrates. This result can be accounted for by the background gas effects. The stoichiometric In_2O_3 nuclei should be formed in the nonequilibrium high-pressure and high-temperature region generated by the shock front excited by the pulsed laser. Microstructures of the deposited thin films were also investigated using a cross-sectional transmission electron microscope. Initially, amorphous-like layers with a thickness of about 50 nm were formed on the substrates. Subsequently, strongly textured crystalline columns grew on the amorphous-like layers. We discuss the mechanism of thin film growth in PLD.
机译：背景气体中的脉冲激光沉积（PLD）是一种制备多组分功能薄膜的有前途的方法，因为烧蚀物质与背景气体之间的相互作用不仅促进物理碰撞，而且还促进化学反应，并影响沉积膜的特性。通过PLD制备的氧化铟（In_2O_3）薄膜在背景气体中的性质与背景气压有关。在高于1.0托的背景气压下，在未加热的玻璃基板上可以获得透明的In_2O_3结晶晶体薄膜。该结果可以由背景气体效应来解释。化学计量的In_2O_3核应形成在由脉冲激光激发的激波锋产生的非平衡高压和高温区域。还使用横截面透射电子显微镜研究了沉积的薄膜的微观结构。最初，在基板上形成厚度约为50nm的类非晶层。随后，强烈织构的结晶柱在无定形样层上生长。我们讨论了PLD中薄膜生长的机理。

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