首页> 外文会议>Conference on Photon Processing in Microelectronics and Photonics Jan 21-24, 2002 San Jose, USA >Direct writing of planar ultracapacitors by laser forward transfer processing
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Direct writing of planar ultracapacitors by laser forward transfer processing

机译:通过激光正向转移工艺直接写入平面超级电容器

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We employ a novel laser forward transfer process, Matrix Assisted Pulsed Laser Evaporation Direct Write (MAPLE-DW), in combination with ultraviolet laser micromachining, to fabricate mesoscale ultracapacitors and microbatteries under ambient temperature and atmospheric conditions. Our laser engineering approach enables the deposition of hydrous ruthenium oxide (RuO_xH_y or RuO_2 ·x H_2O) films with the desired high surface area morphology, without compromising the electrochemical performance of this high specific capacitance material. We compare three different deposition formulations incorporating ethylene glycol, glycerol, or sulfuric acid. The best electrochemical performance is achieved using a mixture of sulfuric acid with RuO_2 · 0.5 H_2O electrode material. Our ultracapacitors exhibit the expected linear discharge behavior under a constant current drain, and the electrochemical properties of these cells scale proportionately when combined in parallel and series.
机译:我们采用一种新颖的激光正向转移工艺,即矩阵辅助脉冲激光蒸发直接写入(MAPLE-DW),并结合了紫外激光微加工技术,以在环境温度和大气条件下制造中型超级电容器和微电池。我们的激光工程方法可沉积具有所需高表面积形态的含水氧化钌(RuO_xH_y或RuO_2·x H_2O)膜,而不会损害这种高比电容材料的电化学性能。我们比较了掺入乙二醇,甘油或硫酸的三种不同沉积配方。使用硫酸和RuO_2·0.5 H_2O电极材料的混合物可获得最佳的电化学性能。我们的超级电容器在恒定电流消耗下表现出预期的线性放电行为,并且当并联和串联组合时,这些电池的电化学性能成比例地缩放。

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