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首页> 外文会议>Conference on Silicon-Based and Hybrid Optoelectronics Ⅳ Jan 23-24, 2002, San Jose, USA >Fabrication and evaluation of SiC optical modulators
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Fabrication and evaluation of SiC optical modulators

机译：SiC光调制器的制作与评估

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摘要

Silicon Carbide is a potentially useful compound for use in silicon based photonics because cubic silicon carbide (3C-SiC), possesses a first order electro-optic (Pockels) effect, something absent in pure silicon. This means the material is potentially suitable for high speed optical modulation. Furthermore, the wide bandgap (2.2 eV) of 3C-SiC makes the devices suitable for use over the visible and near infrared spectrum range as well as the longer communication wavelengths, and also means the material can tolerate high temperatures. However, relatively little work has been carried out in SiC for photonics applications. In this paper we will discuss design and fabrication of both SiC waveguides and modulators for silicon based photonics. The fabrication process utilises ion implantation of oxygen into SiC to form the lower waveguide boundary. Subsequently, ribs are etched and contacts are added to form the optical modulators. Consideration of both Pockels modulators and plasma dispersion modulators has been made, and both will be discussed here. These devices have potential for optical modulation, but are also compatible with silicon processing technology. We have demonstrated waveguiding in 3C-SiC, established a processing recipe for the SiC wafers which enables fabrication of 3-dimensional devices, and demonstrated optical modulation. Performance of the resultant devices is compared to other silicon based devices in terms of operating speed and efficiency.
机译：碳化硅是一种潜在有用的化合物，可用于硅基光子学中，因为立方碳化硅（3C-SiC）具有一阶电光（Pockels）效应，纯硅中不存在这种效应。这意味着该材料潜在地适合于高速光学调制。此外，3C-SiC的宽带隙（2.2 eV）使该器件适合在可见光谱和近红外光谱范围以及更长的通信波长范围内使用，也意味着该材料可以耐受高温。然而，在用于光子学应用的SiC中所做的工作相对较少。在本文中，我们将讨论基于硅的光子学的SiC波导和调制器的设计与制造。该制造工艺利用氧离子注入SiC形成下部波导边界。随后，蚀刻肋并添加接触以形成光学调制器。已经考虑了普克尔斯（Pockels）调制器和等离子体色散调制器，并且两者都将在这里讨论。这些设备具有光调制的潜力，但也与硅加工技术兼容。我们已经演示了在3C-SiC中的波导，建立了能够制造3D器件的SiC晶片的加工配方，并演示了光调制。就运行速度和效率而言，将所得器件的性能与其他基于硅的器件进行了比较。

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