Simulation of the sputtered atom transport in a pulse deposition process

机译：脉冲沉积过程中溅射原子传输的模拟

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The results of Monte Carlo simulation of sputtered atom transport in systems with one and two magnetrons operating in pulse regime are presented. The gas pressure and the gap between target and substrate strongly influence on forward and back depositing atom fluxes, their time behavior and energy. The atom fluxes have a weak ripple at higher gas pressures, larger targets-substrate gap and smaller pauses between current pulses.

机译：给出了在具有一个和两个磁控管在脉冲状态下工作的系统中溅射原子传输的蒙特卡洛模拟结果。气压和靶与基板之间的间隙会强烈影响正向和反向沉积原子通量，其时间行为和能量。在较高的气压下，原子通量具有较弱的波动，较大的目标基板间隙和较小的电流脉冲间隔。

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来源
《Control of Inter-Urban Road Networks》|1997年|p.303-306|共4页
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Kuzmichev A.I.; Goncharuk I.M.;
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Nat. Tech. Univ. of Ukraine, Kiev Polytech. Inst.;

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原文格式 PDF
正文语种 eng
中图分类自动化技术、计算机技术;
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2. Simulation of the Sputtered Atom Transport During a Pulse Deposition Process in Single- and Dual-Magnetron Systems [J] . Anatoly Kuzmichev, Igor Goncharuk IEEE Transactions on Plasma Science . 2003,第5期

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Simulation of the sputtered atom transport in a pulse deposition process

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