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New optical approaches to the quantitative characterization of crystal growth segregation and defect formation

机译:定量表征晶体生长偏析和缺陷形成的新光学方法

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Abstract: The meaningful exploration of the potential of reducedgravity environment for the advancement of crystalgrowth is complex. It is to a significant extentcontingent on the conduct of reproducible experimentsin a quantifiable environment. However, most of all itdepends on our ability to extract from grown matricesquantitative analytical information on a scalecommensurate with that of gravitation relatedsegregation effects and defect structures. A newoptical approach, based on NIR microscopy supported bycomputational image analysis and contrast enhancement,has recently been developed and applied to thecharacterization of elemental and compoundsemiconductors. This approach permitted, for the firsttime, a quantitative microsegregation analysis of GaAsand InP; using NIR dark field illumination intransmission mode makes it now possible to detectsubmicron precipitates in semi-insulating GaAs. Thedeveloped techniques, providing for rapid,quantitative, nondestructive analysis, have been shownto be fully compatible with telescience operation. !4
机译:摘要:降低重力环境对促进晶体生长的潜力的有意义的探索是复杂的。它在很大程度上取决于在可量化环境中进行可重复实验的能力。但是,最重要的是取决于我们从生长的矩阵中提取与重力相关的偏析效应和缺陷结构相当的定量分析信息的能力。最近已经开发了一种基于近红外显微镜的新型光学方法,该方法由计算图像分析和对比度增强技术支持,并已应用于元素半导体和化合物半导体的表征。这种方法首次允许对GaAs和InP进行定量微偏析分析。在透射模式下使用NIR暗场照明使现在有可能检测半绝缘GaAs中的亚微米沉淀。提供快速,定量,无损分析的已开发技术已证明与远程科学操作完全兼容。 !4

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