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首页> 外文会议>Current developments in lens design and optical engineering XVIII >Multi-band filter design with less total film thickness for short-wave infrared
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Multi-band filter design with less total film thickness for short-wave infrared

机译：多波段滤光片设计，总膜厚较小，可用于短波红外

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A multi-band pass filter array was proposed and designed for short wave infrared applications. The central wavelength of the multi-band pass filters are located about 905 nm, 950 run, 1055 run and 1550 nm. In the simulation of an optical interference band pass filter, high spectrum performance (high transmittance ratio between the pass band and stop-band) relies on (1) the index gap between the selected high/low-index film materials, with a larger gap correlated to higher performance, and (2) sufficient repeated periods of high/low-index thin-film layers. When determining high and low refractive index materials, spectrum performance was improved by increasing repeated periods. Consequently, the total film thickness increases rapidly. In some cases, a thick total film thickness is difficult to process in practice, especially when incorporating photolithography liftoff. Actually the maximal thickness of the photoresist being able to liftoff will bound the total film thickness of the band pass filter. For the application of the short wave infrared with the wavelength range from 900nm to 1700nm, silicone was chosen as a high refractive index material. Different from other dielectric materials used in the visible range, silicone has a higher absorptance in the visible range opposite to higher transmission in the short wave infrared. In other words, designing band pass filters based on silicone as a high refractive index material film could not obtain a better spectrum performance than conventional high index materials like TiO_2 or Ta_2O_5, but also its material cost would reduce about half compared to the total film thickness with the conventional material TiO_2. Through the simulation and several experimental trials, the total film thickness below 4 um was practicable and reasonable. The fabrication of the filters was employed a dual electric gun deposition system with ion assisted deposition after the lithography process. Repeating four times of lithography and deposition process and black matrix coating, the optical device processes were completed.
机译：提出并设计了一种用于短波红外应用的多带通滤波器阵列。多带通滤波器的中心波长位于大约905 nm，950游程，1055游程和1550 nm。在光学干涉带通滤波器的仿真中，高光谱性能（通带与阻带之间的高透射比）取决于（1）所选高/低折射率薄膜材料之间的折射率间隙，其中间隙较大与更高的性能相关；（2）高/低折射率薄膜层有足够的重复周期。在确定高折射率材料和低折射率材料时，通过增加重复周期可以改善光谱性能。因此，总膜厚迅速增加。在某些情况下，在实践中很难处理较厚的总膜厚，尤其是在合并光刻胶剥离时。实际上，能够剥离的光致抗蚀剂的最大厚度将限制带通滤波器的总膜厚度。为了应用波长范围从900nm到1700nm的短波红外，选择了有机硅作为高折射率材料。与在可见光范围内使用的其他介电材料不同，有机硅在可见光范围内具有更高的吸收率，与短波红外中的更高透射率相反。换句话说，设计基于有机硅的带通滤光片作为高折射率材料膜无法获得比常规高折射率材料（如TiO_2或Ta_2O_5）更好的光谱性能，但是与总膜厚相比，其材料成本将降低约一半使用常规材料TiO_2。通过模拟和几次实验试验，总膜厚低于4 um是可行和合理的。滤光片的制造采用双电枪沉积系统，在光刻过程之后进行离子辅助沉积。重复四次光刻和沉积工艺以及黑底涂层，完成了光学器件工艺。

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