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Characterization of Tin vapor from CO_2 laser produced EUV light source

机译：CO_2激光产生的EUV光源中锡蒸气的表征

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摘要

We evaluated basic characteristics of energetic plasma ions and neutrals, and of low-energy fragments (e.g. evaporated material and liquid micro-droplets) from a Tin (Sn) plasma produced by a CO_2 (10.6 μm) or Nd:YAG (1064 nm) laser. Experiments were performed with free-standing liquid droplet, semi-fixed liquid droplet and fixed solid droplet targets. Characteristics of energetic plasma ions, neutrals and fragments were measured by Faraday Cups, laser-induced fluorescence (LIF) imaging and shadowgraph imaging, respectively. The Sn ions were emitted towards the laser incident direction with a velocity of 10 ～ 100 km/s (kinetic energy of 0.06 ～ 6 keV) and the fragments (the majority of the target material) ejected in the same direction as laser pulse at a velocity of 10 ～ 500m/s. The neutrals were emitted in all directions from the target with a velocity of 5 ～ 40 km/s (kinetic energy of 0.015 ～ 1 keV).
机译：我们评估了由CO_2（10.6μm）或Nd：YAG（1064 nm）产生的锡（Sn）等离子体产生的高能等离子体离子和中性离子以及低能碎片（例如蒸发的物质和液体微滴）的基本特征激光。用独立式液滴，半固定式液滴和固定式固体液滴靶进行实验。通过法拉第杯，激光诱导荧光（LIF）成像和阴影图成像分别测量了高能等离子体离子，中性离子和碎片的特征。 Sn离子以10〜100 km / s的速度（0.06〜6 keV的动能）向着激光入射方向发射，并且碎片（大部分目标材料）以与激光脉冲相同的方向在90℃下射出。速度10〜500m / s。中性粒子以5〜40 km / s的速度（0.015〜1 keV的动能）从目标向各个方向发射。

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  • 来源
    《Damage to VUV, EUV, and x-ray optics II》|2009年|73610X.1-73610X.12|共12页
  • 会议地点 Prague(CZ)
  • 作者

    Yoshifumi Ueno; Tatsuya Yanagida; Takashi Suganuma; Hiroshi Komori; Akira Sumitani; Akira Endo;

  • 作者单位

    EUVA (Extreme Ultraviolet Lithography System Development Association), 1200 Manda Hiratsuka, Kanagawa, 254-8567, Japan;

    EUVA (Extreme Ultraviolet Lithography System Development Association), 1200 Manda Hiratsuka, Kanagawa, 254-8567, Japan;

    EUVA (Extreme Ultraviolet Lithography System Development Association), 1200 Manda Hiratsuka, Kanagawa, 254-8567, Japan;

    EUVA (Extreme Ultraviolet Lithography System Development Association), 1200 Manda Hiratsuka, Kanagawa, 254-8567, Japan;

    EUVA (Extreme Ultraviolet Lithography System Development Association), 1200 Manda Hiratsuka, Kanagawa, 254-8567, Japan;

    EUVA (Extreme Ultraviolet Lithography System Development Association), 1200 Manda Hiratsuka, Kanagawa, 254-8567, Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    extreme ultraviolet lithography; laser produced plasma; CO_2 laser; Sn; LIF; debris;

    机译：极紫外光刻；激光产生的等离子体CO_2激光；锡; LIF;碎屑;

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