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首页> 外文会议>Damage to VUV, EUV, and X-ray Optics; Proceedings of SPIE-The International Society for Optical Engineering; vol.6586 >Debris and Radiation-Induced Damage Effects on EUV Nanolithography Source Collector Mirror Optics Performance
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Debris and Radiation-Induced Damage Effects on EUV Nanolithography Source Collector Mirror Optics Performance

机译：碎片和辐射引起的对EUV纳米光刻源收集器镜光学性能的损害影响

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摘要

Exposure of collector mirrors facing the hot, dense pinch plasma in plasma-based EUV light sources to debris (fast ions, neutrals, off-band radiation, droplets) remains one of the highest critical issues of source component lifetime and commercial feasibility of nanolithography at 13.5-nm. Typical radiators used at 13.5-nm include Xe and Sn. Fast particles emerging from the pinch region of the lamp are known to induce serious damage to nearby collector mirrors. Candidate collector configurations include either multi-layer mirrors (MLM) or single-layer mirrors (SLM) used at grazing incidence. Studies at Argonne have focused on understanding the underlying mechanisms that hinder collector mirror performance at 13.5-nm under fast Sn or Xe exposure. This is possible by a new state-of-the-art in-situ EUV reflectometry system that measures real time relative EUV reflectivity (15-degree incidence and 13.5-nm) variation during fast particle exposure. Intense EUV light and off-band radiation is also known to contribute to mirror damage. For example off-band radiation can couple to the mirror and induce heating affecting the mirror's surface properties. In addition, intense EUV light can partially photo-ionize background gas (e.g., Ar or He) used for mitigation in the source device. This can lead to local weakly ionized plasma creating a sheath and accelerating charged gas particles to the mirror surface and inducing sputtering. In this paper we study several aspects of debris and radiation-induced damage to candidate EUVL source collector optics materials. The first study concerns the use of IMD simulations to study the effect of surface roughness on EUV reflectivity. The second studies the effect of fast particles on MLM reflectivity at 13.5-nm. And lastly the third studies the effect of multiple energetic sources with thermal Sn on 13.5-nm reflectivity. These studies focus on conditions that simulate the EUVL source environment in a controlled way.
机译：在基于等离子的EUV光源中，面对热的密集收缩等离子体的集电极镜暴露于碎屑（快速离子，中性离子，带外辐射，液滴）仍然是光源组件寿命和纳米光刻的商业可行性的最高关键问题之一。 13.5 nm。在13.5 nm处使用的典型辐射器包括Xe和Sn。已知从灯的收缩区域出现的快速颗粒会对附近的集光镜造成严重损坏。候选收集器配置包括在掠入射时使用的多层反射镜（MLM）或单层反射镜（SLM）。 Argonne的研究重点在于了解在快速的Sn或Xe暴露下阻碍13.5 nm处的集电极镜性能的潜在机理。这可以通过新的先进的原位EUV反射测量系统实现，该系统可测量快速粒子暴露过程中实时相对EUV反射率（15度入射角和13.5 nm）变化。众所周知，强烈的EUV光和带外辐射也会造成反射镜损坏。例如，带外辐射会耦合到反射镜并引起加热，从而影响反射镜的表面性能。另外，强烈的EUV光可以部分地电离用于缓解源设备中的背景气体（例如Ar或He）。这可能会导致局部弱电离的等离子体产生鞘，并加速带电气体颗粒到达镜面并引发溅射。在本文中，我们研究了碎屑以及辐射对候选EUVL源收集器光学材料造成的损坏的几个方面。第一项研究涉及使用IMD模拟来研究表面粗糙度对EUV反射率的影响。第二个研究快速粒子对13.5 nm处的MLM反射率的影响。最后，第三篇文章研究了含热锡的多种高能光源对13.5 nm反射率的影响。这些研究集中于以受控方式模拟EUVL源环境的条件。

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