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LithoScope: An Advanced Physical Modeling System for Mask Data Verification

机译：LithoScope：用于遮罩数据验证的高级物理建模系统

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摘要

The complexity in sub-130 nm mask layout often obscures its correctness and true lithography performance. A cost effective solution to ensure high mask performance in lithography is to apply simulation based mask layout verification. Because mask layout verification serves as a gateway to the expensive manufacturing process, the model used for verification must have superior accuracy across the process window than models used upstream. In this paper, we demonstrate, for the first time, a software system for mask layout verification and optical proximity correction that employs a full resist development model. The new system, LithoScope, predicts wafer pattern by solving optical and resist processing equations on a scale that is until recently considered unpractical. Leveraging the predictive capability of the physical model, LithoScope can perform mask layout verification and optical proximity correction under a wide range of processing conditions and for any reticle enhancement technology without the need for multiple model development. We discuss hotspot detection, line width variation statistics, and chip level process window prediction using a practical cell layout. We show that LithoScope model can accurately describe the resist-intensive poly gate layer patterning by iso-focal optimization. This system can be used to pre-screen and fix mask data problems before manufacturing to reduce the overall cost of the mask and the product.
机译：低于130 nm的掩模版图的复杂性通常会掩盖其正确性和真正的光刻性能。确保光刻中高掩模性能的一种经济有效的解决方案是应用基于仿真的掩模布局验证。由于掩模版图验证是通往昂贵制造工艺的门户，因此用于验证的模型在整个过程窗口中必须具有比上游使用的模型更高的准确性。在本文中，我们首次展示了采用完整抗蚀剂开发模型的用于掩模版图验证和光学邻近校正的软件系统。新系统LithoScope通过求解光学和抗蚀剂处理方程来预测晶片图案，直到最近才认为它不可行。利用物理模型的预测能力，LithoScope可以在广泛的处理条件下针对任何掩模版增强技术执行掩模版图验证和光学邻近校正，而无需开发多个模型。我们讨论了使用实际单元布局进行的热点检测，线宽变化统计和芯片级工艺窗口预测。我们表明，LithoScope模型可以通过等焦点优化准确地描述抗蚀剂密集的多晶硅栅极层构图。该系统可用于在制造之前预先筛选并修复掩模数据问题，以降低掩模和产品的总体成本。

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