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首页> 外文会议>Conference on design and process integration for microelectronic manufacturing >LithoScope: An Advanced Physical Modeling System for Mask Data Verification
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LithoScope: An Advanced Physical Modeling System for Mask Data Verification

机译：LITTOSCONE：用于掩模数据验证的高级物理建模系统

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摘要

The complexity in sub-130 nm mask layout often obscures its correctness and true lithography performance. A cost effective solution to ensure high mask performance in lithography is to apply simulation based mask layout verification. Because mask layout verification serves as a gateway to the expensive manufacturing process, the model used for verification must have superior accuracy across the process window than models used upstream. In this paper, we demonstrate, for the first time, a software system for mask layout verification and optical proximity correction that employs a full resist development model. The new system, LithoScope, predicts wafer pattern by solving optical and resist processing equations on a scale that is until recently considered unpractical. Leveraging the predictive capability of the physical model, LithoScope can perform mask layout verification and optical proximity correction under a wide range of processing conditions and for any reticle enhancement technology without the need for multiple model development. We discuss hotspot detection, line width variation statistics, and chip level process window prediction using a practical cell layout. We show that LithoScope model can accurately describe the resist-intensive poly gate layer patterning by iso-focal optimization. This system can be used to pre-screen and fix mask data problems before manufacturing to reduce the overall cost of the mask and the product.
机译：Sub-130 NM掩模布局中的复杂性通常会掩盖其正确性和真正的光刻性能。一种成本有效的解决方案，以确保光刻中的高掩模性能是应用基于仿真的掩模布局验证。由于掩模布局验证用作昂贵的制造过程的网关，所以用于验证的模型必须在过程窗口中具有卓越的精度，而不是上游的模型。在本文中，我们首次示出了用于掩模布局验证和光学接近校正的软件系统，该软件系统采用全抗蚀性开发模型。新系统Littoscope，通过求解光学和抗蚀剂处理方程，以直到最近被认为是不实验性的等级来预测晶片图案。利用物理模型的预测能力，Littichoscope可以在广泛的加工条件下执行掩模布局验证和光学邻近校正，并且对于任何掩模版增强技术，无需多种模型开发。我们讨论热点检测，线宽变化统计和芯片级处理窗口预测使用实用的单元布局。我们表明，通过ISO-ofal优化可以准确地描述岩石镜模型可以准确地描述抗蚀剂密集的多栅极层。该系统可用于在制造之前预先筛选和修复掩模数据问题，以降低掩模和产品的总成本。

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