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Analysis of Silicon Micromachining by UV Lasers, and Implications for Full Cut Laser Dicing of Ultra-Thin Semiconductor Device Wafers

机译:紫外激光对硅进行微加工的分析及其对超薄半导体器件晶圆的全切块激光切割的意义

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摘要

3D packaging technologies such as FLASH rely on die-to-die stacking of ultra-thin silicon devices with individual diernthicknesses below 100 um. Because ultra-thin silicon wafers are very fragile, mechanical saw dicing of sub 100 um thickrnwafers tends to be more challenging, requiring slower processing and reduced throughput and/or yields. These challengesrnmake full cut laser dicing an attractive solution. This presentation provides an investigation for machining of 50 um thickrnsilicon wafers using a Gaussian-shaped, nanosecond pulsewidth, 355 nm UV laser. A range of machining speeds and laserrnfluence are compared, from single laser pulses to highly overlapped slow-velocity machining. 3D Laser ScanningrnMicroscope and FIB/TEM cross sections are employed to characterize the state and depth of heating damage into the Sirnmaterial. Implications for laser machining rates and die break strength are investigated for full cut laser dicing.
机译:诸如FLASH之类的3D封装技术依赖于单个厚度小于100 um的超薄硅器件的裸片到裸片堆叠。由于超薄硅晶圆非常易碎,因此对小于100微米厚的晶圆进行机械锯切往往更具挑战性,需要较慢的处理过程以及降低的产量和/或成品率。这些挑战使全切割激光切割成为一种有吸引力的解决方案。本演讲提供了使用高斯形,纳秒级脉冲宽度,355 nm UV激光器加工50 um厚硅晶片的研究。比较了从单个激光脉冲到高度重叠的慢速加工的一系列加工速度和激光通量。使用3D激光扫描显微镜和FIB / TEM横截面来表征进入Sirnmaterial的加热损伤的状态和深度。研究了全切割激光切割对激光加工速度和模头断裂强度的影响。

著录项

  • 来源
    《Device packaging 2010》|2010年|p.1-3|共3页
  • 会议地点 Scottsdale/Fountain Hills AZ(US)
  • 作者

    A. Hooper; D. Finn;

  • 作者单位

    Electro-Scientific Industriesrn13900 NW Science Park DrivernPortland, OR 97229rn503-671-5478, 503-671-5262 (fax), hoopera@esi.com;

    Electro-Scientific Industriesrn13900 NW Science Park DrivernPortland, OR 97229;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 制造工艺;
  • 关键词

    wafer dicing; laser singulation; laser micromachining;

    机译:晶圆切割;激光切割;激光微加工;

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