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首页> 外文会议>Device packaging 2010 >Electromigration Performance of WLP with Polymer Core Solder Balls
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Electromigration Performance of WLP with Polymer Core Solder Balls

机译：聚合物芯焊球对WLP的电迁移性能

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This talk will compare the electromigration performance of wafer level packages havingrnstandard SnAgCu solder with those having solder balls with polymer cores. Informationrnon package construction, process, and board level reliability of packages having ballsrnwith polymer cores was presented earlier (2009 International Wafer Level PackagingrnConference, San Jose, CA). In the new ball variation, the structure is made of a largernsolid polymer core, which is plated with a thin layer of copper and covered with a layerrnof SnAg. The polymer core within the solder ball ensures that the standoff heightrnremains constant during board assembly, and acts as a stress absorption layer between thernSi and the PCB during any thermal excursion and drop testing. Such characteristicsrnallow extension of the wafer level package from small pin count (~30 I/O) to higher pinrncount (100+ I/O) without the need for redistribution layers.rnFor electromigration, bump resistances were monitored continuously at different currentrndensities and temperatures for the two package types. Equivalent performance wasrnobtained. Similar failure modes were observed in both cases, with pancake-like voidrnformation growing outward from the pad corners due to current crowding. Equivalentrnperformance was obtained, with both packages exhibiting MTTF of 1200 hrs at 150C,rnand 550 hrs at 165C. Application to a modified Black’s equation to predict MTTF andrnaccount for current crowding, heating, and stress will also be discussed.
机译：本演讲将比较标准SnAgCu焊料与具有聚合物芯焊球的晶圆级封装的电迁移性能。较早之前介绍了具有带聚合物核球的封装的Informationrnon封装的构造，工艺和板级可靠性（2009年国际晶圆级封装大会，加利福尼亚州圣何塞）。在新的球变体中，该结构由更大的固态聚合物芯制成，该芯镀有一层薄薄的铜，并覆盖有一层SnAg。焊球内的聚合物芯可确保支脚高度rn在电路板组装期间保持恒定，并在任何热漂移和压降测试期间充当rnSi和PCB之间的应力吸收层。这种特性使晶圆级封装从小引脚数（〜30 I / O）扩展到更高的引脚数（100+ I / O），而无需重新分配层。对于电迁移，在不同的电流密度和温度下连续监测凸点电阻两种包装类型。获得了等效的性能。在两种情况下都观察到类似的失效模式，由于电流拥挤，煎饼状的空隙形成从焊垫角向外生长。获得了等效的性能，两种封装的MTTF均在150°C下显示1200小时，在165°C下显示550小时。还将讨论如何将其应用于修正的布莱克方程，以预测当前的拥挤，发热和压力的MTTF和值。

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  • 来源
    《Device packaging 2010》|2010年|p.1|共1页
  • 会议地点 Scottsdale/Fountain Hills AZ(US)
  • 作者

    Luu Nguyen; H. Nguyen; A. Prabhu;

  • 作者单位

    National Semiconductor Corp.rnP.O. Box 58090, M/S D3-300rnSanta Clara, CA 95052rnP: 408-721-4786rnP: luu.nguyen@nsc.com;

    National Semiconductor Corp.rnP.O. Box 58090, M/S D3-300rnSanta Clara, CA 95052;

    National Semiconductor Corp.rnP.O. Box 58090, M/S D3-300rnSanta Clara, CA 95052;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 制造工艺;
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