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Process Control for Wet Etching for Silicon Wafer Thinning

机译：硅晶圆薄化湿法刻蚀的过程控制

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Thin wafers have become a basic need for a wide variety of new microelectronicrnproducts. Thinner die are being required to fit into thinner packages. Wafers that havernbeen thinned using a final wet etch process on the backside have less stress comparedrnwith standard mechanical backgrinding. Isotropic wet etching of silicon is typicallyrndone with a mixture of nitric and hydrofluoric acids along with the addition ofrnchemicals to adjust for viscosity and surface wettability for single wafer spinrnprocessing. As the silicon is etched and incorporated in the etching solution the etchrnrate will decrease with time. This variation has been modeled. The focus of this paper isrnto compare the process control techniques for maintaining a consistent etch rate as arnfunction of time and wafers processed. The models allow for either the time to bernextended, chemicals to be replenished or a combination of these.

机译：薄晶圆已成为各种新型微电子产品的基本需求。需要更薄的模具以适合更薄的封装。与标准机械背面研磨相比，使用最终的湿蚀刻工艺在背面进行了减薄的晶圆应力较小。硅的各向同性湿法刻蚀通常是将硝酸和氢氟酸混合在一起，再加入化学药品以调整粘度和单晶片旋涂工艺的表面可湿性。随着硅被蚀刻并结合到蚀刻溶液中，蚀刻速率将随着时间而降低。这种变化已被建模。本文的重点是比较用于维持时间和晶片加工时间一致的蚀刻速率的工艺控制技术。这些模型允许延长时间，补充化学品或将这些方式组合在一起。

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来源
《Device packaging 2010》|2010年|p.1-5|共5页
会议地点 Scottsdale/Fountain Hills AZ(US)
作者
Laura Mauer; Herman Itzkowitz; John Taddei;
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作者单位

Solid State Equipment Corporationrn185 Gibraltar RoadrnHorsham, PA 19044rnPhone: 215-328-0700rne-mail: lmauer@ssecusa.com;

Solid State Equipment Corporationrn185 Gibraltar RoadrnHorsham, PA 19044;

Solid State Equipment Corporationrn185 Gibraltar RoadrnHorsham, PA 19044;

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正文语种 eng
中图分类制造工艺;
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1. Novel wet etching of silicon nitride in a single wafer spin processor [J] . Yu B., Huang S., Yeh M., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2013,第Null期

机译：在单晶片旋转处理器中进行新颖的氮化硅湿法蚀刻
2. Improvement of thickness uniformity of bulk silicon wafer by numerically controlled local wet etching [J] . Mikinori Nagano, Takuro Mitani, Kazuaki Ueda, Journal of Crystal Growth . 2009,第8期

机译：通过数控局部湿法刻蚀改善块状硅片的厚度均匀性
3. Improvement of Thickness Uniformity of Bulk Silicon Wafer by Numerically Controlled Local Wet Etching [J] . Kazuya Yamamura, Takuro Mitani, Kazuaki Ueda, Key Engineering Materials . 2009,第期

机译：数控局部湿法刻蚀改善块状硅片厚度均匀性
4. Process Control for Wet Etching for Silicon Wafer Thinning [C] . Laura Mauer, Herman Itzkowitz, John Taddei International Conference and Exhibition on Device Packaging . 2010

机译：用于硅晶片稀释的湿法蚀刻的过程控制
5. Electrical through-wafer interconnects and microfabricated cantilever arrays using through-wafer silicon etching. [D] . Chow, Eugene Michael. 2001

机译：晶圆上电互连和使用晶圆硅刻蚀的微型悬臂阵列。
6. Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer [O] . Eyad Abdur-Rahman, Ibrahim Alghoraibi, Hassan Alkurdi 2017

机译：异丙醇浓度和刻蚀时间对低电阻晶体硅晶片湿化学各向异性刻蚀的影响
7. WET ETCHING UNIFORM WAFER-LEVEL THINNING OF BULK PIEZOELECTRIC CERAMICS ON SILICON [O] . E.E. Aktakka, R.L. Peterson, K. Najafi 2012

机译：硅片压电陶瓷湿蚀刻和均匀晶片级变薄
8. Technique for protecting chip corners in wet chemical etching of silicon wafers [R] . Hui, W. C. 1991

机译：在硅晶片的湿化学蚀刻中保护芯片角的技术

Process Control for Wet Etching for Silicon Wafer Thinning

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