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Technique for protecting chip corners in wet chemical etching of silicon wafers

机译：在硅晶片的湿化学蚀刻中保护芯片角的技术

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When a silicon wafer is under wet chemical etching, any outer corners of a chip may face severe undercutting. This undercutting problem is extremely serious for the boundary comers of the chips; and very often it can limit the compactness in the design of the chips. A special etching mask pattern was developed for protecting the boundary corners of the chips under wet chemical etching. The main central part of this pattern could prevent any undercutting at the corners during the etching. But, there was a timing ''fuse'' that would eliminate this central part and open up the comers at any desired time. Thus, the corner protection could be set up for only a specific length of time. With this ''timing bomb'' device, it in turn could allow better compactness in the design of the chips.

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作者
Hui, W. C.;
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年度 1991
页码 1-21
总页数 21
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Integrated Circuits ; Etching ; Silicon ; Design ; Fabrication ; Semiconductor Materials;

机译：集成电路;蚀刻;硅;设计;制造;半导体材料;

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专利

1. Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer [J] . Eyad Abdur-Rahman, Ibrahim Alghoraibi, Hassan Alkurdi, International journal of analytical chemistry . 2017,第期

机译：异丙醇浓度及蚀刻时间对低电阻率晶体晶片湿化学各向异性蚀刻的影响
2. Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher [J] . Hitoshi Habuka, Kosuke Mizuno, Shintaro Ohashi ECS Journal of Solid State Science and Technology . 2013,第6期

机译：单晶圆湿法刻蚀稀氟化氢刻蚀二氧化硅薄膜的表面化学反应模型
3. Improvement of multicrystalline silicon wafer solar cells by post-fabrication wet-chemical etching in phosphoric acid [J] . A Mefoued, A Messaoud, B Palahouane, Bulletin of materials science . 2011,第7期

机译：在磷酸中通过后湿化学刻蚀改进多晶硅晶片太阳能电池
4. A novel convex corner compensation for wet anisotropic etching on (100) silicon wafer [C] . Huai-Yuan Chu, Weileun Fang . 2004

机译：用于（100）硅片上湿法各向异性蚀刻的新型凸角补偿
5. Development of silicon chemical wet etching toward the realization of an integrated thermal-electronic package. [D] . Holke, Alexander Dietrich. 1999

机译：朝着集成热电子封装的方向发展硅化学湿法刻蚀。
6. Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer [O] . Eyad Abdur-Rahman, Ibrahim Alghoraibi, Hassan Alkurdi 2017

机译：异丙醇浓度和刻蚀时间对低电阻晶体硅晶片湿化学各向异性刻蚀的影响
7. Technique for protecting chip corners in wet chemical etching of silicon wafers [O] . Wing C. Hui 1991

机译：硅晶片湿化学蚀刻中的保护芯片角的技术
8. Technique for protecting chip corners in wet chemical etching of silicon wafers. [R] . Hui, W. C. 1991

机译：在硅晶片的湿化学蚀刻中保护芯片角的技术。

Technique for protecting chip corners in wet chemical etching of silicon wafers

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