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Application-specific integrated processing for ULSI,

机译：ULSI的专用集成处理，

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Abstract: ULSI device manufacturing requires capital equipment manufacturers to deliver state-of-the-art performance, particle- free process environments, and high uptime. With critical dimensions of 0.5 $mu and below, essentially perfect etching results are required to meet device requirements. Gate structures, once simple poly-si types, are now multiple films of poly-si plus silicide. Contact hole etching to silicon requires damage free and polymer free surfaces following etch. Metallizations, once single aluminum alloy films, are now complex refractory metal/aluminum/refractory metal sandwiches. Multiple etch steps are required to successfully process these layers. Drytek has manufactured integrated process equipment for the past six years. To meet the demand for ULSI, Drytek has developed the ASIQ$+TM$/, or Application Specific Integrated Quad. Our paper discusses the benefits of the ASIQ$+TM$/ system concept for complex etch applications, where the use of different plasma sources on the same integrated process platform is required for near perfect etching results of ULSI devices.!14
机译：摘要：ULSI设备制造要求资本设备制造商提供最先进的性能，无颗粒的工艺环境和较高的正常运行时间。关键尺寸为0.5μmu及以下时，需要基本完美的蚀刻结果才能满足器件要求。曾经是简单的多晶硅类型的栅极结构现在是多晶硅和硅化物的多层薄膜。对硅的接触孔蚀刻需要在蚀刻后无损伤和无聚合物的表面。曾经是单一铝合金膜的金属镀层现在是复杂的难熔金属/铝/难熔金属三明治。成功地处理这些层需要多个蚀刻步骤。 Drytek在过去六年中制造了集成处理设备。为了满足对ULSI的需求，Drytek开发了ASIQ $ + TM $ /或专用集成四核。我们的论文讨论了ASIQ $ + TM $ /系统概念对复杂蚀刻应用的好处，在这种情况下，需要在同一集成处理平台上使用不同的等离子体源，以实现近乎完美的ULSI器件蚀刻结果！14

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