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首页> 外文会议>Electrical, optical, and magnetic properties of organic solid-state materials IV >STRUCTURAL AND ELECTRONIC PROPERTIES OF SELF-ASSEMBLED SUPRAMOLECULAR GRID STRUCTURES: DOPING OF SUPRAMOLECULAR THIN FILMS
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STRUCTURAL AND ELECTRONIC PROPERTIES OF SELF-ASSEMBLED SUPRAMOLECULAR GRID STRUCTURES: DOPING OF SUPRAMOLECULAR THIN FILMS

机译：自组装超分子网格结构的结构和电子性质：超薄膜的浸渍

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Thin films of self-assembled supramolecular grid structures were prepared by electrochemical deposition. The surface structure of the films was determined by electrochemical in-situ scanning tunneling microscopy (STM), revealing ordered monolayers of the grid molecules on a Au(111) surface. The electronic structure of the films was studied by photoelectron spectroscopy. The thin films show semiconducting behavior with an insulating gap of ca. 2.5 eV. The size of insulating gap can be reduced to 0.5 eV by doping the films with additional Cd~(2+) ions, which is in agreement with molecular orbital calculations. Additionally, conductivity measurements were performed. By doping of the thin films, their conductivity could be increased by several orders of magnitude. This is due to additional electronic states in the insulating HOMO-LUMO gap, which is confirmed by UPS measurements.
机译：通过电化学沉积制备自组装超分子网格结构的薄膜。膜的表面结构是通过电化学原位扫描隧道显微镜（STM）确定的，揭示了Au（111）表面上网格分子的有序单层。通过光电子能谱研究了薄膜的电子结构。薄膜显示出半导体行为，绝缘间隙为。 2.5 eV。通过在薄膜中添加其他Cd〜（2+）离子，可以将绝缘间隙的大小减小到0.5 eV，这与分子轨道计算相符。另外，进行电导率测量。通过掺杂薄膜，它们的电导率可以增加几个数量级。这是由于绝缘的HOMO-LUMO间隙中存在其他电子状态，这由UPS测量确定。

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