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首页> 外文会议>Symposium on electrical, optical, and magnetic properties of organic solid-state materials >STRUCTURAL AND ELECTRONIC PROPERTIES OF SELF-ASSEMBLED SUPRAMOLECULAR GRID STRUCTURES: DOPING OF SUPRAMOLECULAR THIN FILMS
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STRUCTURAL AND ELECTRONIC PROPERTIES OF SELF-ASSEMBLED SUPRAMOLECULAR GRID STRUCTURES: DOPING OF SUPRAMOLECULAR THIN FILMS

机译：自组装超分子网格结构的结构和电子性能：超分子薄膜的掺杂

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Thin films of self-assembled supramolecular grid structures were prepared by electrochemical deposition. The surface structure of the films was determined by electrochemical in-situ scanning tunneling microscopy (STM), revealing ordered monolayers of the grid molecules on a Au(111) surface. The electronic structure of the films was studied by photoelectron spectroscopy. The thin films show semiconducting behavior with an insulating gap of ca. 2.5 eV. The size of insulating gap can be reduced to 0.5 eV by doping the films with additional Cd~(2+) ions, which is in agreement with molecular orbital calculations. Additionally, conductivity measurements were performed. By doping of the thin films, their conductivity could be increased by several orders of magnitude. This is due to additional electronic states in the insulating HOMO-LUMO gap, which is confirmed by UPS measurements.
机译：通过电化学沉积制备自组装的超分子栅格结构的薄膜。通过电化学原位扫描隧道显微镜（STM）测定薄膜的表面结构，揭示栅格分子的有序单层在Au（111）表面上。通过光电子谱研究薄膜的电子结构。薄膜显示出具有Ca绝缘间隙的半导体行为。 2.5 ev。通过将薄膜与附加的CD〜（2+）离子掺杂薄膜，绝缘间隙的尺寸可以减少到0.5eV，这与分子轨道计算一致。另外，进行电导率测量。通过掺杂薄膜，它们的电导率可以增加几个数量级。这是由于绝缘同性恋间隙中的额外电子国家，由UPS测量确认。

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