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Future Technology Proposal for Damascene Process Using All Wet Electrochemical Technique

机译：使用全湿式电化学技术进行镶嵌工艺的未来技术提案

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摘要

Copper is an indispensable interconnection material in electronics devices owing to its low resistivity and high electromigration resistances. The Cu interconnection technology for the ULSI has been developed through the implementation of Damascene processes by IBM (1-2). However, Cu interconnection could be deteriorated by the diffusion of Cu atoms into the inter-level dielectrics. Forming a layer of diffusion barrier is one of the effective techniques for preventing the Cu diffusion. Today, the diffusion barrier layers are formed by a dry process; i.e., physical vapor deposition (PVD). Although PVD methods such as sputtering yield high quality layers, they have severe problems in producing conformal coatings in high aspect ratio via contacts and trenches measuring the sub-100 nm. Recently, chemical vapor deposition and atomic layer deposition are also being investigated for that application, and offer excellent conformal layers, but they require special precursors and multi-chambered equipment. An alternative to dry processes is a wet deposition process, such as an electroless deposition method. The wet process offers good step coverage on substrates with nano scale trenches and vias, a simple procedure and tool, usually leading to a high cost performance.
机译：铜由于其低电阻率和高电迁移电阻而成为电子设备中必不可少的互连材料。 IBM（1-2）通过实施镶嵌工艺开发了用于ULSI的Cu互连技术。但是，Cu互连可能会由于Cu原子扩散到层间电介质中而恶化。形成扩散阻挡层是防止Cu扩散的有效技术之一。如今，扩散阻挡层是通过干法形成的。即物理气相沉积（PVD）。尽管PVD方法（例如溅射）可产生高质量的层，但它们在通过测量小于100 nm的接触和沟槽以高纵横比生产保形涂层方面存在严重问题。最近，化学气相沉积和原子层沉积也正在针对该应用进行研究，并提供了出色的保形层，但它们需要特殊的前驱体和多室设备。干法的替代方法是湿法沉积法，例如化学沉积法。湿法工艺可在具有纳米级沟槽和通孔的基板上提供良好的阶梯覆盖，这是一种简单的步骤和工具，通常会导致较高的性价比。

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  • 来源
  • 会议地点 San Francisco CA(US);San Francisco CA(US)
  • 作者

    Tetsuya OSAKA; Masahiro YOSHINO; Yosi SHACHAM-DIAMAND;

  • 作者单位

    Department of Applied Chemistry, Waseda University,3-4-1 Okubo, Shinjuku-ku, Tokyol69-8555, JAPAN;

    Department of Applied Chemistry, Waseda University,3-4-1 Okubo, Shinjuku-ku, Tokyol69-8555, JAPAN;

    Department of Applied Chemistry, Waseda University,3-4-1 Okubo, Shinjuku-ku, Tokyol69-8555, JAPAN Vacuity of Engineering, Tel Aviv University, Ramat-Aviv 69978, ISRAEL;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学电源、电池、燃料电池;
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