Mobility Characterization by Magnetoresistance in Ultra Thin SOI Ring-FETs

机译：超薄SOI环形FET中的磁阻迁移率表征

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We report a novel use of magneto-resistance (MR) to estimate carrier mobility in ultra-thin virgin SOI wafers. Measurements were made in pseudo-MOSFET configuration with electrical contacts in Corbino geometry and substrate biasing. The use of high magnetic fields enabled accurate extraction of electron mobility as a function of gate voltage (effective field) and film thickness. The MR mobility values are large and correlate well with the field-effect mobility determined in pseudo-MOSFETs at zero magnetic field.

机译：我们报告了一种新型的磁阻（MR）用途，以估算超薄的原始SOI晶圆中的载流子迁移率。在伪MOSFET配置下进行测量，并采用Corbino几何形状的电触点和衬底偏置。高磁场的使用使得能够根据栅极电压（有效场）和膜厚度精确提取电子迁移率。 MR迁移率值很大，并且与在零磁场下在伪MOSFET中确定的场效应迁移率良好相关。

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《Electrochemical Society(ECS) Meeting;International Symposium on Silicon-on-Insulator Technology and Devices; 20070506-11;20070506-11; Chicago,IL(US);Chicago,IL(US)》|2007年|P.279284|共2页
会议地点 ChicagoIL(US);ChicagoIL(US)
作者
T.V. Chandrasekhar Rao; S. Cristoloveanu; J. Antoszewski; T. Nguyen; H. Hovel; P. Gentil; L. Faraone;
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作者单位

Microelectronics Research Group, School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley , WA 6009, Australia;

TPPED, Bhabha Atomic Research Centre, Bombay 400085, India;

IMEP, INPG Minatec, BP 257, 38016 Gre;

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1. Low field electron mobility in ultra-thin SOI MOSFETs: experimental characterization and theoretical investigation [J] . David Esseni, Enrico Sangiorgi Solid-State Electronics . 2004,第6期

机译：超薄SOI MOSFET中的低场电子迁移率：实验特性和理论研究
2. Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors [J] . W. Chaisantikulwat, M. Mouis, G. Ghibaudo, Solid-State Electronics . 2006,第4期

机译：差分磁阻技术用于超短沟道FDSOI晶体管的迁移率提取
3. Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs [J] . Minju Shin, Ming Shi, Mireille Mouis, Solid-State Electronics . 2015,第jana期

机译：先进FD-SOI n-MOSFET中的磁阻迁移率表征
4. Mobility Characterization by Magnetoresistance in Ultra Thin SOI Ring-FETs [C] . T. V. Chandrasekhar Rao, S. Cristoloveanu, J. Antoszewski, Electrochemical Society Meeting . 2007

机译：超薄SOI环形FET中磁阻的移动性表征
5. Mobility and drive performance of ultra-thin hafnium-oxide-gated MOSFET's. [D] . Guo, Dechao. 2007

机译：超薄氧化ha门控MOSFET的迁移率和驱动性能。
6. Determination of magnetic anisotropy constants and domain wall pinning energy of Fe/MgO(001) ultrathin film by anisotropic magnetoresistance [O] . Bo Hu, Wei He, Jun Ye, -1

机译：各向异性磁阻法测定Fe / MgO（001）超薄膜的磁各向异性常数和畴壁钉扎能
7. Mobility Characterization by Magnetoresistance in Ultra Thin SOI Ring-FETs [O] . T. V. Ch, Rasekhar Raoa, S. Cristoloveanuc, 2016

机译：超薄sOI环形FET中磁电阻的迁移率表征

Mobility Characterization by Magnetoresistance in Ultra Thin SOI Ring-FETs

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