Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications

机译：SOI多栅极MOSFET（MuGFET）在低功耗应用中的内在优势

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MuGFET structure improves local transistor mismatch compared to planar bulk MOSFET. This enables further SRAM cell size reduction. GIDL current is well controlled even with a mid-gap metal gate. MuGFETs have low subthreshold leakage if L_g/W_(si) ratio is kept above 1.5. The advantage of MuGFET subthreshold leakage suppression is even more pronounced at higher temperatures. Furthermore MuGFETs are compatible with local strain techniques to improve carrier mobility. The aforementioned qualities, along with low manufacturing cost of single mid-band-gap metal gate, make MuGFET a good candidate to replace planar bulk MOSFET for Low-Power Applications.

机译：与平面体MOSFET相比，MuGFET结构改善了局部晶体管的失配。这样可以进一步减小SRAM单元的尺寸。即使使用中间间隙的金属栅极，也可以很好地控制GIDL电流。如果L_g / W_（si）比率保持在1.5以上，则MuGFET的亚阈值漏电流低。 MuGFET亚阈值泄漏抑制的优势在更高的温度下更加明显。此外，MuGFET与局部应变技术兼容，可提高载流子迁移率。前述质量以及单个中带隙金属栅极的低制造成本使MuGFET成为替代低功耗应用中的平面体MOSFET的理想选择。

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《Electrochemical Society(ECS) Meeting;International Symposium on Silicon-on-Insulator Technology and Devices; 20070506-11;20070506-11; Chicago,IL(US);Chicago,IL(US)》|2007年|P.5969|共2页
会议地点 ChicagoIL(US);ChicagoIL(US)
作者
Weize Xiong; C. Rinn Cleavelin; Che-Hua Hsu; Mike Ma; K. Schruefer; Klaus Von Armiti; T. Schulz; I. Cayrefourcq; C. Mazure; P. Patruno; M. Kennard; Kyoungsub Shin; Xin Sun; Tsu-Jae King Liu; K. Cherkaoui; J.P Colinge;
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Texas Instruments Inc., SiTD, Dallas, TX USA;

Central RD, United Microelectronics Corporation (UMC), Hsin-Chu City, Taiwan;

Infineon Technologies, Neubiberg, Germany;

SOITEC S.A., Bemin, France;

University of California, Berkeley, CA USA;

Tyndall National In;

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2. A Comparative Study on SOI MOSFETs for Low Power Applications [J] . Khakul Affendi Rosli, Raja Mohd. Noor Hafizi Raja Daud, Md. Mamun, Research journal of applied science, engineering and technology . 2013,第8期

机译：低功耗应用中SOI MOSFET的比较研究
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机译：低功耗应用中SOI MOSFET的比较研究
4. Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications [C] . Weize Xiong, C. Rinn Cleavelin, Che-Hua Hsu, Electrochemical Society Meeting . 2007

机译：用于低功耗应用的SOI多栅MOSFET（MUGFET）的内在优点
5. Modeling of SOI MOSFET for low-noise and low-power applications. [D] . Jin, Wei. 2000

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Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications

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