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首页> 外文会议>Electrochemical Society(ECS) Meeting;State-of-the-Art Program on Compound Semiconductors;SOTAPOCS;International Symposium on Process at the Semiconductor-Solution Interface; 20070506-10;20070506-10;20070506-10;20070506-10; Chicago,IL(US);Chicago,IL(US);C >Fabrication and Characterization of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes Using Hydrogen Ion-Implantation Techniques
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Fabrication and Characterization of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes Using Hydrogen Ion-Implantation Techniques

机译：氢离子注入技术制备基于InGaN的绿色谐振腔发光二极管

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摘要

InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) have been fabricated using hydrogen ion-implantation and laser lift-off techniques. The RCLED structure consisted of an InGaN/GaN multiple-quantum-well active layer between top (5-pairs) and bottom (7.5-pairs) dielectric TiO_2/SiO_2 distributed Bragg reflectors with optical reflectances of 85% and 99.9%, respectively. The insulating layers of the RCLEDs were formed by either hydrogen ion implanted layers of 1×10~(14) ions/cm~2 or SiO_2 films, respectively. The corresponding forward turn-on voltages for a 0.6 KA/cm~2 dc injection current density were about 4.58 and 4.55 V, respectively. The light output intensity of the RCLEDs with H~+ implantation is higher by a factor of 1.4 compared with the SiO_2 structure at a current density of 0.6 KA/cm~2. The RCLEDs with H~+ implantation have superior directionality compared to the RCLEDs without H~+ implantation.
机译：已经使用氢离子注入和激光剥离技术制造了基于InGaN的绿色谐振腔发光二极管（RCLED）。 RCLED结构由位于顶部（5对）和底部（7.5对）介电TiO_2 / SiO_2分布的布拉格反射器之间的InGaN / GaN多量子阱有源层组成，其光反射率分别为85％和99.9％。 RCLED的绝缘层分别由1×10〜（14）离子/ cm〜2的氢离子注入层或SiO_2膜形成。对于0.6 KA / cm〜2 dc注入电流密度，相应的正向导通电压分别约为4.58和4.55V。在电流密度为0.6 KA / cm〜2的条件下，采用H〜+注入的RCLED的光输出强度比SiO_2结构要高1.4倍。与未注入H〜+的RCLED相比，注入H〜+的RCLED具有更好的方向性。

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