ELECTRICAL CHARACTERISTICS AND THERMAL STABILITY OF W_2N/Ta_2O_5/Si MOS CAPACITORS IN N_2:O_2 AND H_2 AMBIENTS

机译：N_2：O_2和H_2气氛中W_2N / Ta_2O_5 / Si MOS电容器的电学特性和热稳定性

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The thermal stability and electrical property of the W_2N/Ta_2O_5/Si MOS capacitors upon post-metal annealing in oxidizing (N_2:O_2) or reducing (H_2) ambient are investigated. During annealing in N_2:O_2 ambient at 500℃ or above, the W_2N gate transforms to WO_3 owing to the thermodynamic driving force. Replacement of nitrogen by oxygen starts from the W_2N surface and progresses gradually into the gate structure. In contrast, no WO_3 phase is observed for the samples annealing in H_2 ambient. The nitrogen profile of the H_2 annealed W_2N gate depletes slightly in the middle but rises on the W_2N surface and at the W_2N/Ta_2O_5 interface. In the meantime, MOS capacitors annealing in H_2 ambient exhibit superior C-V and Ⅰ-Ⅴ characteristics than those annealing in N_2:O_2 ambient. The connection between the physical properties and electrical characteristics of W_2N/Ta_2O_5/Si MOS capacitors upon annealing in oxidizing and reducing atmospheres is discussed.

机译：研究了W_2N / Ta_2O_5 / Si MOS电容器在氧化（N_2：O_2）或还原（H_2）环境中进行金属后退火时的热稳定性和电性能。在500℃以上的N_2：O_2环境中退火时，由于热力学驱动力，W_2N门转变为WO_3。氧对氮的置换从W_2N表面开始，逐渐发展为栅极结构。相反，对于在H_2环境中退火的样品，未观察到WO_3相。 H_2退火的W_2N栅极的氮分布在中部略微耗尽，但在W_2N表面和W_2N / Ta_2O_5界面处升高。同时，在H_2环境下退火的MOS电容器具有比在N_2：O_2环境下退火的MOS电容器更好的C-V和Ⅰ-Ⅴ特性。讨论了W_2N / Ta_2O_5 / Si MOS电容器在氧化和还原气氛中退火后的物理性质与电特性之间的联系。

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来源
《Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR》|2003年|P.400-407|共8页
会议地点 Paris(FR);Paris(FR)
作者
P. C.Jiang; J.S.Chen;
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作者单位

Department of Materials Science and Engineering National Cheng Kung University Tainan, Taiwan;

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原文格式 PDF
正文语种 eng
中图分类大规模集成电路、超大规模集成电路;
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ELECTRICAL CHARACTERISTICS AND THERMAL STABILITY OF W_2N/Ta_2O_5/Si MOS CAPACITORS IN N_2:O_2 AND H_2 AMBIENTS

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