• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR >NEW CHARACTERIZATION TECHNIQUES FOR SOI AND RELATED DEVICES
【24h】

NEW CHARACTERIZATION TECHNIQUES FOR SOI AND RELATED DEVICES

机译：SOI和相关设备的新表征技术

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

As deep submicron CMOS is evolving to Partially Depleted (PD) and Fully Depleted (FD) SOI technologies, it is mandatory that characterization techniques introduced on bulk devices can be extended to SOI. The choice of a Floating Body (FB) device introduces also a few parasitic and generally undesirable circuit behaviors such as "kink-effect", "history dependence" and "self-heating". To insure the future of SOI devices for Ultra Large Scale Integration (ULSI) circuits, these effects need to be measured and modeled accurately. This paper describes the measurement techniques used to characterize SOI FB devices. They include transient measurements, self-heating measurements, and the Transient Charge Pumping (TCP) method.
机译：随着深亚微米CMOS逐渐发展为部分耗尽（PD）和完全耗尽（FD）SOI技术，必须将在批量设备上引入的表征技术扩展到SOI。浮体（FB）器件的选择还引入了一些寄生的和通常不希望有的电路行为，例如“扭结效应”，“历史依赖”和“自热”。为了确保超大规模集成电路（ULSI）电路的SOI器件的未来发展，需要对这些影响进行精确测量和建模。本文介绍了用于表征SOI FB器件的测量技术。它们包括瞬态测量，自热测量和瞬态电荷泵（TCP）方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号